- 您现在的位置：买卖IC网 > PDF目录60669 > GSS6900S (GTM CORPORATION) DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE PDF资料下载
参数资料
| 型号： | GSS6900S |
| 厂商： | GTM CORPORATION |
| 英文描述： | DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
| 中文描述： | 双N沟道MOSFET的肖特基二极管 |
| 文件页数： | 1/8页 |
| 文件大小： | 565K |
| 代理商： | GSS6900S |
GSS4816S
Page: 1/8
ISSUED DATE :2006/04/28
REVISED DATE :
G
G S
S S
S 66990000S
S
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
Description
The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*DC-DC Converter Suitable
*Fast Switching Performance
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Ratings
Parameter
Symbol
CH-1
CH-2
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current3
ID @TA=25 :
5.7
9.8
A
Continuous Drain Current3
ID @TA=70 :
4.6
7.8
A
Pulsed Drain Current1
IDM
20
30
A
Total Power Dissipation
PD @TA=25 :
1.4
3.1
W
Linear Derating Factor
0.01
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Value
Parameter
Symbol
Typ.
Max.
Unit
Thermal Resistance Junction-ambient3
Rthj-a(CH-1)
70
90
: /W
Thermal Resistance Junction-ambient3
Rthj-a(CH-2)
42
40
: /W
Thermal Resistance Junction-ambient3
Rthj-a(Schottky)
52
60
: /W
Pb Free Plating Product
CH1 BVDSS
30V
N-CH RDS(ON) 30m
N-CH ID
5.7A
CH2 BVDSS
30V
N-CH RDS(ON) 22m
N-CH ID
9.8A
相关PDF资料 |
PDF描述 |
|---|---|
| GSS6982 | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9510 | 30V N-Channel PowerTrench MOSFET |
| GSS9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9926E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9930 | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GSS6982 | 制造商:GTM 制造商全称:GTM 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS7 | 制造商:HellermannTyton 功能描述:SLEEVING HELAGLASS 7MM 25M 制造商:HellermannTyton 功能描述:SLEEVING, HELAGLASS, 7MM, 25M 制造商:HELLERMANN TYTON 功能描述:SLEEVING, HELAGLASS, 7MM, 25M; Sleeving / Tubing Type:Braided; Sleeving Material:Fibre Reinforced Silicone; Internal Diameter:7mm; Sleeving Colour:White; SVHC:No SVHC (19-Dec-2012); Accessory Type:Sleeving; Body Material:Fibre ;RoHS Compliant: Yes 制造商:HellermannTyton 功能描述:HELAGLASS 7.0MM BRD SLV WHITE |
| GSS8 | 制造商:HellermannTyton 功能描述:SLEEVING HELAGLASS 8MM 25M 制造商:HellermannTyton 功能描述:SLEEVING, HELAGLASS, 8MM, 25M 制造商:HELLERMANN TYTON 功能描述:SLEEVING, HELAGLASS, 8MM, 25M; Sleeving / Tubing Type:Braided; Sleeving Material:Fibre Reinforced Silicone; Internal Diameter:8mm; Sleeving Colour:White; SVHC:No SVHC (19-Dec-2012); Accessory Type:Sleeving; Body Material:Fibre ;RoHS Compliant: Yes 制造商:HellermannTyton 功能描述:HELAGLASS 8.0MM BRD SLV WHITE |
| GSS-8-3.8-G | 制造商:Interconnect Devices Inc (IDI) 功能描述:0.100 INCH CENTERLINE SPACING SPRING CONTACT PROBE 60DEGREE CHISEL 制造商:Interconnect Devices Inc (IDI) 功能描述:TEST CONNECTOR 制造商:Interconnect Devices Inc (IDI) 功能描述:TEST CONNECTOR; Connector Tip Style:Pyramid; Current Rating:3A; Overall Length:10.79mm; Spring Force Initial:1.6oz; Spring Force Working Travel:3.8oz; Centerline Spacing:2.54mm; Series:GSS ;RoHS Compliant: Yes |
| GSS-8-3.8-G S/C W/HOLE .415 OAL | 功能描述:触点探头 HEADED 60 DEG 3 SIDE CHISEL RoHS:否 制造商:IDI 类型:Probes 尖端类型:Spherical Radius 长度:8.26 mm 电流额定值:10 A 弹力:2.3 oz 行程:1.52 mm 系列:101050 |
发布紧急采购，3分钟左右您将得到回复。