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参数资料
| 型号： | GSS6900S |
| 厂商： | GTM CORPORATION |
| 英文描述： | DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
| 中文描述： | 双N沟道MOSFET的肖特基二极管 |
| 文件页数： | 3/8页 |
| 文件大小： | 565K |
| 代理商： | GSS6900S |
GSS4816S
Page: 3/8
ISSUED DATE :2006/04/28
REVISED DATE :
CH-2 Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.1
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
11
-
S
VDS=10V, ID=9A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
:
-
100
uA
VDS=30V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
1
mA
VDS=24V, VGS=0
-
22
VGS=10V, ID=9A
Static Drain-Source On-Resistance2
RDS(ON)
-
29
m
VGS=4.5V, ID=7A
Total Gate Charge2
Qg
-
25
40
Gate-Source Charge
Qgs
-
4
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
nC
ID=7A
VDS=24V
VGS=10V
Turn-on Delay Time2
Td(on)
-
10
-
Rise Time
Tr
-
6
-
Turn-off Delay Time
Td(off)
-
26
-
Fall Time
Tf
-
12
-
ns
VDS=20V
ID=1A
VGS=10
RG=5.7
RD=20
Input Capacitance
Ciss
-
1170
1860
Output Capacitance
Coss
-
205
-
Reverse Transfer Capacitance
Crss
-
142
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
Rg
-
1.7
-
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=2.6A, VGS=0V
Reverse Recovery Time2
Trr
-
21
-
ns
Reverse Recovery Charge
Qrr
-
16
-
nC
IS=7A, VGS=0V
dI/dt=100A/ s
Schottky Characteristics @ Tj=25 (unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward Voltage Drop
VF
-
0.47
0.5
V
IF=1A
-
0.004
0.2
mA VR=30V
Max. Reverse Leakage Current
IRM
-
0.5
1
mA VR=30V, Tj=100 :
Junction Capacitance
CT
-
66
-
pF
VR=10V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec.
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