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参数资料
型号： GSS6900S
厂商： GTM CORPORATION
英文描述： DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
中文描述： 双N沟道MOSFET的肖特基二极管
文件页数： 2/8页
文件大小： 565K
代理商： GSS6900S
GSS4816S
Page: 2/8
ISSUED DATE :2006/04/28
REVISED DATE :
CH-1 Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.01
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
5.7
-
S
VDS=10V, ID=5A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=30V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=24V, VGS=0
-
30
VGS=10V, ID=5A
Static Drain-Source On-Resistance2
RDS(ON)
-
37
m
VGS=4.5V, ID=3A
Total Gate Charge2
Qg
-
9
15
Gate-Source Charge
Qgs
-
2
-
Gate-Drain (“Miller”) Change
Qgd
-
6
-
nC
ID=6A
VDS=24V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
8
-
Rise Time
Tr
-
7
-
Turn-off Delay Time
Td(off)
-
19
-
Fall Time
Tf
-
6
-
ns
VDS=15V
ID=1A
VGS=10
RG=3.3
RD=15
Input Capacitance
Ciss
-
610
970
Output Capacitance
Coss
-
160
-
Reverse Transfer Capacitance
Crss
-
120
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
Rg
-
1.6
-
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=1.2A, VGS=0V
Reverse Recovery Time2
Trr
-
18
-
ns
Reverse Recovery Charge
Qrr
-
11
-
nC
IS=6A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec.
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