参数资料
型号: GTS9922E
厂商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N沟道增强型功率MOSFET
文件页数: 1/4页
文件大小: 286K
代理商: GTS9922E
GTS9922E
Page: 1/4
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
G
G T
T S
S 99992222E
E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
*Surface mount package
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
-
1.20
E
6.20
6.60
A1
0.05
0.15
E1
4.30
4.50
b
0.19
0.30
e
0.65 BSC
c
0.09
0.20
L
0.45
0.75
D
2.90
3.10
S
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current3, VGS@4.5V
ID @TA=25 :
6.8
A
Continuous Drain Current3, VGS@4.5V
ID @TA=70 :
5.4
A
Pulsed Drain Current1
IDM
25
A
Total Power Dissipation
PD @TA=25 :
1
W
Linear Derating Factor
0.008
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
125
/
: W
BVDSS
20V
RDS(ON)
15m
ID
6.8A
Pb Free Plating Product
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