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参数资料
| 型号： | GWM100-01X1-SL |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC FULL BRIDGE 3PH ISOPLUS STRT |
| 标准包装： | 28 |
| FET 型： | 6 N-沟道（3 相桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.5 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 90nC @ 10V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 17-SMD，扁平引线 |
| 供应商设备封装： | SMD |
| 包装： | 管件 |
GWM 100-01X1
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
V DSS = 100 V
I D25 = 90 A
R DSon typ. = 7.5 m W
G1
G3
G5
S1
S3
S5
L1
L2
G2
G4
G6
L3
Straight leads
Surface Mount Device
MOSFETs
S2
S4
S6
L-
Applications
Symbol
V DSS
V GS
I D25
I D90
Conditions
T J = 25°C to 150°C
T C = 25°C
T C = 90°C
Maximum Ratings
100 V
± 20 V
90 A
68 A
AC drives
? in automobiles
- electric power steering
- starter generator
? in industrial vehicles
- propulsion drives
- fork lift drives
I F25
I F90
T C = 25°C (diode)
T C = 90°C (diode)
90
68
A
A
? in battery supplied equipment
Features
Symbol
Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? MOSFETs in trench technology:
- low R DSon
- optimized intrinsic reverse diode
? package:
R DSon
V GS(th)
I DSS
I GSS
1)
on chip level at
V GS = 10 V; I D = 80 A
V DS = 20 V; I D = 250 μA
V DS = V DSS ; V GS = 0 V
V GS = ± 20 V; V DS = 0 V
T J = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
2.5
7.5
14
0.1
8.5
4.5
1
0.2
m W
m W
V
μA
mA
μA
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
? Space and weight savings
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
E on
E off
E recoff
V GS = 10 V; V DS = 65 V; I D = 90 A
inductive load
V GS = 10 V; V DS = 48 V
I D = 70 A; R G = 33 ? ;
T J = 125°C
90
30
30
130
95
290
55
0.4
0.4
0.007
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
Package options
? 2 lead frames available
- straight leads (SL)
- SMD lead version (SMD)
R thJC
R thJH
with heat transfer paste (IXYS test setup)
1.3
1.0
1.6
K/W
K/W
1)
V DS = I D · (R DS(on) + 2R Pin to Chip )
Recommended replacements: MTI 85W100GC
IXYS reserves the right to change limits, test conditions and dimensions.
? 2011 IXYS All rights reserved
20110505f
1-6
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相关代理商/技术参数 |
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|---|---|
| GWM100-01X1-SL SAM | 功能描述:分立半导体模块 3 Phase Full Bridge RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
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| GWM100-01X1-SMD | 功能描述:MOSFET 100 Amps 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| GWM100-01X1-SMD SAM | 功能描述:分立半导体模块 100 Amps 100V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| GWM100-01X1-SMDSAM | 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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