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参数资料
| 型号： | HCPL-3180-500 |
| 英文描述： | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| 中文描述： | 当前，高速式IGBT / MOSFET的门极驱动光电耦合器 |
| 文件页数： | 15/19页 |
| 文件大小： | 466K |
| 代理商： | HCPL-3180-500 |
15
θ
LD
= 442 C/W
T
JE
T
JD
θ
LC
= 467 C/W
θ
DC
= 126 C/W
θ
CA
= 83 C/W*
T
C
T
A
Thermal Model
(Discussion applies to HCPL-3180)
The steady state thermal model for the HCPL-3180 is shown in Figure 28. The thermal resistance values
given in this model can be used to calculate the temperatures at each node for a given operating
condition. As shown by the model, all heat generated flows through Q
CA
which raises the case
temperature T
C
accordingly. The value of Q
CA
depends on the conditions of the board design and is,
therefore, determined by the designer. The value of Q
CA
= +83 °C/W was obtained from thermal
measurements using a 2.5 x 2.5 inch PC board, with small traces (no ground plane), a single HCPL- 3180
soldered into the center of the board and still air. The absolute maximum power dissipation derating
specifications assume a Q
CA
value of +83 °C/W From the thermal mode in Figure 28 the LED and
detector IC junction temperatures can be expressed as:
A
CA
LC
LD
DC
D
CA
LD
DC
LC
DC
+
LC
+
E
JD
A
CA
LD
DC
LC
DC
+
LC
+
//(
D
CA
DC
LD
*
θ
LC
E
JE
T
P
P
T
T
P
P
T
+
+
+
+
+
=
+
+
+
+
+
=
)
)
(
*
)
(
*
)
*
(
*
)
//(
(
*
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
Inserting the values for Q
LC
and Q
DC
shown in Figure 28 gives:
T
JE
= PE·(+256 °C/W + Q
CA
)+ PD·(+57 °C/W + Q
CA
) +
T
A
T
JD
= PE·(+57 °C/W + Q
CA
)+ PD·(+111 °C/W + Q
CA
) +
T
A
For example, given P
E
= 45 mW,
P
O
= 250 mW, T
A
= +70 °C and QCA= +83 °C/W:
T
JE
= PE·(+339 °C/W + PD·(+140 °C/W +
T
A
= 45 mW·+339 °C/W + 250 mW·+140 °C/W + +70 °C
= +120 °C
T
JD
= PE·(+140 °C/W + PD·+194 °C/W +
T
A
= 45 mW·+140 °C/W + 250 mW·+194 °C/W + +70 °C
= +125 °C
T
JE
and T
JD
should be limited to +125 °C based on the board layout and part placement (QCA) specific
to the application.
TJE = LED junction temperature
TJD = detector IC junction temperature
TC = case temperature measured at the center of the package bottom
Q
LC
= LED-to-case thermal resistance
Q
LD
= LED-to-detector thermal resistance
Q
DC
= detector-to-case thermal resistance
Q
CA
= case-to-ambient thermal resistance
*Q
CA
will depend on the board design and the placement of the part.
Figure 27. Energy Dissipated in the HCPL-3180 for each IGBT
Figure 28. Thermal Model
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
Rg(ohm)
E
Qg = 100nC
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| HCPL-3180-500E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-560 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-3180-560E | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| HCPL-354-000E | 功能描述:晶体管输出光电耦合器 3750 Vrms 20% CTR RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| HCPL-354-000E | 制造商:Avago Technologies 功能描述:OPTOCOuPLER OPTOCOuPLER OuTPuT TyPE:TRAN |
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