参数资料
型号: HCS473PQTP
厂商: Microchip Technology Inc.
英文描述: IC EEPROM SPI BUS 8KBIT 8-SOIC
中文描述: 跳码编码器和转发器
文件页数: 51/68页
文件大小: 1629K
代理商: HCS473PQTP
2002 Microchip Technology Inc.
Preliminary
DS40035C-page 49
HCS473
7.0
ELECTRICAL CHARACTERISTICS
7.1
Absolute Maximum Ratings
Ambient temperature under bias..........................................................................................................-40°C to +125°C
Storage temperature ........................................................................................................................... -65°C to +150°C
Voltage on V
DD
w/respect to V
SS
.......................................................................................................... -0.3V to +7.5V
Voltage on LED w/respect to V
SS
.............................................................................................................-0.3V to +11V
Voltage on all other pins w/respect to V
SS
.......................................................................................-0.3V to V
DD
+0.3V
Total power dissipation
(1)
..................................................................................................................................500 mW
Maximum current out of V
SS
pin ........................................................................................................................100 mA
Maximum current into V
DD
pin...........................................................................................................................100 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
).......................................................................................................±20 mA
Output clamp current, I
OK
(Vo < 0 or Vo >V
DD
)..................................................................................................±20 mA
Maximum output current sunk by any Output pin.................................................................................................25 mA
Maximum output current sourced by any Output pin ...........................................................................................25 mA
Note 1:
Power dissipation is calculated as follows: P
DIS
=V
DD
x {I
DD
- I
OH
} + {(V
DD
-V
OH
) x I
OH
} + (V
O
l x I
OL
).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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