参数资料
| 型号： | HFA1130IBZ |
| 厂商： | Intersil |
| 文件页数： | 9/13页 |
| 文件大小： | 0K |
| 描述： | IC OP AMP 850MHZ CFB 8-SOIC |
| 标准包装： | 98 |
| 放大器类型： | 电流反馈 |
| 电路数： | 1 |
| 转换速率： | 2300 V/µs |
| -3db带宽： | 850MHz |
| 电流 - 输入偏压： | 25µA |
| 电压 - 输入偏移： | 2000µV |
| 电流 - 电源： | 21mA |
| 电流 - 输出 / 通道： | 60mA |
| 电压 - 电源，单路/双路(±)： | ±4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1234 (CN2011-ZH PDF) |
5
FN3369.5
April 25, 2013
Tracing the path from VH to Z illustrates the effect of the
clamp voltage on the high impedance node. VH decreases
by 2VBE (QN6 and QP6) to set up the base voltage on QP5.
QP5 begins to conduct whenever the high impedance node
reaches a voltage equal to QP5’s base + 2VBE (QP5 and
QN5). Thus, QP5 clamps node Z whenever Z reaches VH.
R1 provides a pull-up network to ensure functionality with the
clamp inputs floating. A similar description applies to the
symmetrical low clamp circuitry controlled by VL.
When the output is clamped, the negative input continues to
source a slewing current (ICLAMP) in an attempt to force the
output to the quiescent voltage defined by the input. QP5
must sink this current while clamping, because the -IN
current is always mirrored onto the high impedance node.
The clamping current is calculated as (V-IN - VOUT)/RF. As
an example, a unity gain circuit with VIN = 2V, VH = 1V, and
RF = 510Ω would have ICLAMP = (2-1)/510Ω = 1.96mA.
Note that ICC will increase by ICLAMP when the output is
clamp limited.
Clamp Accuracy
The clamped output voltage will not be exactly equal to the
voltage applied to VH or VL. Offset errors, mostly due to VBE
mismatches, necessitate a clamp accuracy parameter which is
found in the device specifications. Clamp accuracy is a function
of the clamping conditions. Referring again to Figure 1, it can
be seen that one component of clamp accuracy is the VBE
mismatch between the QX6 transistors, and the QX5
transistors. If the transistors always ran at the same current
level there would be no VBE mismatch, and no contribution to
the inaccuracy. The QX6 transistors are biased at a constant
current, but as described earlier, the current through QX5 is
equivalent to ICLAMP. VBE increases as ICLAMP increases,
causing the clamped output voltage to increase as well. ICLAMP
is a function of the overdrive level (V-IN -VOUTCLAMPED) and
RF,so clamp accuracy degrades as the overdrive increases, or
as RF decreases. As an example, the specified accuracy of
±60mV for a 2X overdrive with R
F = 510Ω degrades to ±220mV
for RF = 240Ω at the same overdrive, or to ±250mV for a 3X
overdrive with RF = 510Ω.
Consideration must also be given to the fact that the clamp
voltages have an effect on amplifier linearity. The
“Nonlinearity Near Clamp Voltage” curve in the data sheet
illustrates the impact of several clamp levels on linearity.
Clamp Range
Unlike some competitor devices, both VH and VL have usable
ranges that cross 0V. While VH must be more positive than VL,
both may be positive or negative, within the range restrictions
indicated in the specifications. For example, the HFA1130 could
be limited to ECL output levels by setting VH = -0.8V and
VL = -1.8V. VH and VL may be connected to the same voltage
(GND for instance) but the result won’t be in a DC output
voltage from an AC input signal. A 150 - 200mV AC signal will
still be present at the output.
Recovery from Overdrive
The output voltage remains at the clamp level as long as the
overdrive condition remains. When the input voltage drops
below the overdrive level (VCLAMP/AVCL) the amplifier will
return to linear operation. A time delay, known as the
Overdrive Recovery Time, is required for this resumption of
linear operation. The plots of “Unclamped Performance” and
“Clamped Performance” highlight the HFA1130’s
subnanosecond recovery time. The difference between the
unclamped and clamped propagation delays is the overdrive
recovery time. The appropriate propagation delays are 4.0ns
for the unclamped pulse, and 4.8ns for the clamped (2X
overdrive) pulse yielding an overdrive recovery time of
800ps. The measurement uses the 90% point of the output
transition to ensure that linear operation has resumed.
Note: The propagation delay illustrated is dominated by the
fixturing. The delta shown is accurate, but the true HFA1130
propagation delay is 500ps.
Use of Die in Hybrid Applications
This amplifier is designed with compensation to negate the
package parasitics that typically lead to instabilities. As a
result, the use of die in hybrid applications results in
overcompensated performance due to lower parasitic
capacitances. Reducing RF below the recommended values
for packaged units will solve the problem. For AV = +2 the
recommended starting point is 300
Ω, while unity gain
applications should try 400
Ω.
PC Board Layout
The frequency performance of this amplifier depends a great
deal on the amount of care taken in designing the PC board.
The use of low inductance components such as chip
resistors and chip capacitors is strongly recommended,
while a solid ground plane is a must!
Attention should be given to decoupling the power supplies.
A large value (10
μF) tantalum in parallel with a small value
chip (0.1
μF) capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the
input and output of the device. Output capacitance, such as
that resulting from an improperly terminated transmission
line will degrade the frequency response of the amplifier and
may cause oscillations. In most cases, the oscillation can be
avoided by placing a resistor in series with the output.
Care must also be taken to minimize the capacitance to
ground seen by the amplifier’s inverting input. The larger this
capacitance, the worse the gain peaking, resulting in pulse
overshoot and possible instability. To this end, it is
recommended that the ground plane be removed under
traces connected to pin 2, and connections to pin 2 should
be kept as short as possible.
An example of a good high frequency layout is the
Evaluation Board shown below.
HFA1130
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HFA1130IBZ | 制造商:Intersil Corporation 功能描述:Operational Amplifier (Op-Amp) IC |
| HFA1130IBZ-T | 功能描述:运算放大器 - 运放 W/ANL OPAMP 850MHZ CFB CLMP IND RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| HFA1130IJ | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HFA1130IP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HFA-1130IP | 制造商:Harris Corporation 功能描述: |
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