- 您现在的位置：买卖IC网 > PDF目录18117 > HGT1S10N120BNST (Fairchild Semiconductor)IGBT NPT N-CHAN 1200V TO-263AB PDF资料下载
参数资料
| 型号： | HGT1S10N120BNST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CHAN 1200V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | IGBT TO-3PN Package |
| 标准包装： | 1 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | HGT1S10N120BNSTDKR |
HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
Data Sheet
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are N on- P unch T hrough (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Ordering Information
August 2002
Features
? 35A, 1200V, T C = 25 o C
? 1200V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T J = 150 o C
? Short Circuit Rating
? Low Conduction Loss
? Avalanche Rated
? Thermal Impedance SPICE Model
Temperature Compensating SABER? Model
www.fairchildsemi.com
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
PART NUMBER
HGTG10N120BN
PACKAGE
TO-247
BRAND
G10N120BN
JEDEC STYLE TO-247
E
HGTP10N120BN
HGT1S10N120BNS
TO-220AB
TO-263AB
10N120BN
10N120BN
COLLECTOR
(FLANGE)
C
G
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
G
COLLECTOR
(FLANGE)
C
E
G
E
JEDEC TO-263AB
COLLECTOR
G
(FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
相关PDF资料 |
PDF描述 |
|---|---|
| RHS175 | RHEOSTAT 175 OHM 25W |
| IXFV20N80P | MOSFET N-CH 800V 20A PLUS220 |
| B25834L6475K9 | MKV CAPACITOR 4.7UF 900V |
| HC49US-15.000MABJ-UB | CRYSTAL 15.000 MHZ 18PF HC49/US |
| 5008.2016 | APPLIANCE INLET FLTR 6A 250VAC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S11N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT |
| HGT1S11N120CNS9A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
| HGT1S12N60A4DS | 功能描述:IGBT 晶体管 12A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。