参数资料
型号: HGT1S10N120BNST
厂商: Fairchild Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: IGBT NPT N-CHAN 1200V TO-263AB
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: IGBT TO-3PN Package
标准包装: 1
IGBT 类型: NPT
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,10A
电流 - 集电极 (Ic)(最大): 35A
功率 - 最大: 298W
输入类型: 标准
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 标准包装
产品目录页面: 1610 (CN2011-ZH PDF)
其它名称: HGT1S10N120BNSTDKR
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves
Unless Otherwise Specified (Continued)
40
35
R G = 10 ? , L = 2mH, V CE = 960V
T J = 25 o C, T J = 150 o C, V GE = 12V
50
40
R G = 10 ? , L = 2mH, V CE = 960V
T J = 25 o C, T J = 150 o C, V GE = 12V
30
25
20
T J = 25 o C, T J = 150 o C, V GE = 15V
30
20
10
T J = 25 o C OR T J = 150 o C, V GE = 15V
15
0
5
10
15
20
0
0
5
10
15
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
R G = 10 ? , L = 2mH, V CE = 960V
300
R G = 10 ? , L = 2mH, V CE = 960V
350
250
300
V GE = 12V, V GE = 15V, T J = 150 o C
200
250
200
150
T J = 150 o C, V GE = 12V OR 15V
150
V GE = 12V, V GE = 15V, T J = 25 o C
100
T J = 25 o C, V GE = 12V OR 15V
100
0
5
10
15
20
50
0
5
10
15
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
100
DUTY CYCLE <0.5%, V CE = 20V
PULSE DURATION = 250 μ s
20
I G (REF) = 1mA, R L = 60 ? , T C = 25 o C
80
60
15
10
V CE = 1200V
V CE = 800V
40
20
T C = 25 o C
T C = 150 o C
T C = -55 o C
5
V CE = 400V
0
7
8
9
10
11
12
13
14
15
0
0
20
40
60
80
100
120
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
?2002 Fairchild Semiconductor Corporation
Q G , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
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