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参数资料
| 型号： | HGT1S10N120BNST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CHAN 1200V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | IGBT TO-3PN Package |
| 标准包装： | 1 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | HGT1S10N120BNSTDKR |
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves
Unless Otherwise Specified (Continued)
40
35
R G = 10 ? , L = 2mH, V CE = 960V
T J = 25 o C, T J = 150 o C, V GE = 12V
50
40
R G = 10 ? , L = 2mH, V CE = 960V
T J = 25 o C, T J = 150 o C, V GE = 12V
30
25
20
T J = 25 o C, T J = 150 o C, V GE = 15V
30
20
10
T J = 25 o C OR T J = 150 o C, V GE = 15V
15
0
5
10
15
20
0
0
5
10
15
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
R G = 10 ? , L = 2mH, V CE = 960V
300
R G = 10 ? , L = 2mH, V CE = 960V
350
250
300
V GE = 12V, V GE = 15V, T J = 150 o C
200
250
200
150
T J = 150 o C, V GE = 12V OR 15V
150
V GE = 12V, V GE = 15V, T J = 25 o C
100
T J = 25 o C, V GE = 12V OR 15V
100
0
5
10
15
20
50
0
5
10
15
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
100
DUTY CYCLE <0.5%, V CE = 20V
PULSE DURATION = 250 μ s
20
I G (REF) = 1mA, R L = 60 ? , T C = 25 o C
80
60
15
10
V CE = 1200V
V CE = 800V
40
20
T C = 25 o C
T C = 150 o C
T C = -55 o C
5
V CE = 400V
0
7
8
9
10
11
12
13
14
15
0
0
20
40
60
80
100
120
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
?2002 Fairchild Semiconductor Corporation
Q G , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
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相关代理商/技术参数 |
参数描述 |
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| HGT1S11N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT |
| HGT1S11N120CNS9A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
| HGT1S12N60A4DS | 功能描述:IGBT 晶体管 12A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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