- 您现在的位置：买卖IC网 > PDF目录18117 > HGT1S10N120BNST (Fairchild Semiconductor)IGBT NPT N-CHAN 1200V TO-263AB PDF资料下载
参数资料
| 型号： | HGT1S10N120BNST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CHAN 1200V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | IGBT TO-3PN Package |
| 标准包装： | 1 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | HGT1S10N120BNSTDKR |
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
SYMBOL
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
R θ JC
TEST CONDITIONS
IGBT and Diode at T J = 25 o C
I CE = 10A
V CE = 960V
V GE = 15V
R G = 10 ?
L = 2mH
Test Circuit (Figure 18)
IGBT and Diode at T J = 150 o C
I CE = 10A
V CE = 960V
V GE = 15V
R G = 10 ?
L = 2mH
Test Circuit (Figure 18)
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
23
11
165
100
0.32
0.85
0.8
21
11
190
140
0.4
1.75
1.1
-
MAX
26
15
210
140
0.4
1.1
1.0
25
15
250
200
0.5
2.3
1.4
0.42
UNITS
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
o C/W
NOTES:
4. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in
Figure 18.
Typical Performance Curves
35
30
25
Unless Otherwise Specified
V GE = 15V
60
50
40
T J = 150 o C, R G = 10 ? , V GE = 15V, L = 400 μ H
20
30
15
20
10
5
10
0
25
50
75
100
125
150
0
0
200
400
600
800
1000
1200
1400
T C , CASE TEMPERATURE ( o C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
?2002 Fairchild Semiconductor Corporation
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
相关PDF资料 |
PDF描述 |
|---|---|
| RHS175 | RHEOSTAT 175 OHM 25W |
| IXFV20N80P | MOSFET N-CH 800V 20A PLUS220 |
| B25834L6475K9 | MKV CAPACITOR 4.7UF 900V |
| HC49US-15.000MABJ-UB | CRYSTAL 15.000 MHZ 18PF HC49/US |
| 5008.2016 | APPLIANCE INLET FLTR 6A 250VAC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S11N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT |
| HGT1S11N120CNS9A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
| HGT1S12N60A4DS | 功能描述:IGBT 晶体管 12A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。