参数资料
型号: HGT1S10N120BNST
厂商: Fairchild Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: IGBT NPT N-CHAN 1200V TO-263AB
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: IGBT TO-3PN Package
标准包装: 1
IGBT 类型: NPT
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.7V @ 15V,10A
电流 - 集电极 (Ic)(最大): 35A
功率 - 最大: 298W
输入类型: 标准
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 标准包装
产品目录页面: 1610 (CN2011-ZH PDF)
其它名称: HGT1S10N120BNSTDKR
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
SYMBOL
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
t d(ON)I
t rI
t d(OFF)I
t fI
E ON1
E ON2
E OFF
R θ JC
TEST CONDITIONS
IGBT and Diode at T J = 25 o C
I CE = 10A
V CE = 960V
V GE = 15V
R G = 10 ?
L = 2mH
Test Circuit (Figure 18)
IGBT and Diode at T J = 150 o C
I CE = 10A
V CE = 960V
V GE = 15V
R G = 10 ?
L = 2mH
Test Circuit (Figure 18)
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
23
11
165
100
0.32
0.85
0.8
21
11
190
140
0.4
1.75
1.1
-
MAX
26
15
210
140
0.4
1.1
1.0
25
15
250
200
0.5
2.3
1.4
0.42
UNITS
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
o C/W
NOTES:
4. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in
Figure 18.
Typical Performance Curves
35
30
25
Unless Otherwise Specified
V GE = 15V
60
50
40
T J = 150 o C, R G = 10 ? , V GE = 15V, L = 400 μ H
20
30
15
20
10
5
10
0
25
50
75
100
125
150
0
0
200
400
600
800
1000
1200
1400
T C , CASE TEMPERATURE ( o C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
?2002 Fairchild Semiconductor Corporation
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
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