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参数资料
型号： HGT1S14N37G3VLS
厂商： INTERSIL CORP
元件分类： 功率晶体管
英文描述： 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs)
中文描述： 25 A, N-CHANNEL IGBT, TO-263AB
文件页数： 2/8页
文件大小： 128K
代理商： HGT1S14N37G3VLS
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S14N37G3VLS,
HGTP14N37G3VL
380
24
25
18
±
10
15
11.5
340
136
0.91
-55 to 175
-55 to 175
5
2
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
kV
kV
Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
at V
GE
= 5V, T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 3mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
at L = 3mH, T
C
= 150
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
Collector to Emitter Avalanche Energy at L = 3 mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
Electrostatic Voltage HBM at 250pF, 1500
All Pin Configurations. . . . . . . . . . . . . . . . . .ESD
Electrostatic Voltage MM at 200pF, 0
All Pin Configurations. . . . . . . . . . . . . . . . . . . . . .ESD
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if I
GEM
is limited to 10mA.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CER
I
C
= 10mA, R
G
= 1k
,
V
GE
= 0V,
T
J
= -55
o
C to 175
o
C (Figure 16)
I
C
= 6.5A, V
CE
= 12V
I
C
= 6.5A, V
CE
= 12V, V
GE
= 5V
(Figure 16)
320
350
380
V
Gate to Emitter Plateau Voltage
V
GEP
Q
G(ON)
-
2.76
-
V
Gate Charge
-
27
-
nC
Collector to Emitter Clamp Breakdown Voltage
BV
CE(CL)
BV
ECS
I
CES
I
C
= 15A, R
G
= 1k
I
C
= 10mA
V
CE
= 300V, V
GE
= 0V
(Figure 13)
320
350
380
V
Emitter to Collector Breakdown Voltage
24
28
-
V
Collector to Emitter Leakage Current
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= 175
o
C
-
-
40
μ
A
-
-
250
μ
A
V
CE
= 250V,
V
GE
= 0V (Figure 13)
-
-
10
μ
A
-
-
75
μ
A
Emitter to Collector Leakage Current
I
ECS
V
EC
= -24V,
V
GE
= 0V (Figure 13)
-
-
10
mA
-
-
50
mA
Collector to Emitter On-State Voltage
V
CE(ON)
I
C
= 6A, V
GE
= 4.0V
(Figures 3 through 9)
-
1.3
1.45
V
-
1.25
1.6
V
I
C
= 10A, V
GE
= 4.5V
(Figures 3 through 9)
-
1.45
1.75
V
-
1.5
1.9
V
I
C
= 14A, V
GE
= 5V
(Figures 3 through 9)
-
1.6
2
V
-
1.7
2.3
V
Gate to Emitter Threshold Voltage
V
GE(TH)
R
1
R
2
I
GES
I
C
= 1mA, V
CE
= V
GE
(Figure 12)
1.3
1.8
2.2
V
Gate Series Resistance
-
70
150
Gate to Emitter Resistance
10
18
26
k
Gate to Emitter Leakage Current
V
GE
=
±
10V
±
310
±
500
±
1000
μ
A
HGT1S14N37G3VLS, HGTP14N37G3VL
相关PDF资料
PDF描述
HGTP14N37G3VL 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs)
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相关代理商/技术参数
参数描述
HGT1S14N37G3VLS9A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N40F3VLS 功能描述:IGBT 晶体管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
HGT1S14N40G3VLS 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS9A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB
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