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| 型号： | HGT1S14N37G3VLS |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| 中文描述： | 25 A, N-CHANNEL IGBT, TO-263AB |
| 文件页数： | 3/8页 |
| 文件大小： | 128K |
| 代理商： | HGT1S14N37G3VLS |
3
Gate to Emitter Breakdown Voltage
BV
GES
t
d(ON)I
I
GES
=
±
2mA
I
C
= 6.5A, R
G
= 1k
, V
GE
= 5V,
R
L
= 2.1
, V
DD
= 14V, T
J
= 150
o
C
(Figure 14)
±
12
±
14
-
V
Current Turn-On Delay Time -
Resistive Load
-
1
4
μ
s
Current Turn-On Rise Time -
Resistive Load
t
rI
I
C
= 6.5A, R
G
= 1k
V
GE
= 5V, R
L
= 2.1
V
DD
= 14V, T
J
= 150
o
C (Figure 14)
t
d(OFF)I
+ t
fI
I
C
= 6.5A, R
G
= 1k
V
GE
= 5V, L = 300
μ
H
V
DD
= 300V, T
J
= 150
o
C (Figure 14)
I
SCIS
L = 3mH, V
G
= 5V,
R
G
= 1k
(Figures 1 and 2)
-
3
7
μ
s
Current Turn-Off Time -
Inductive Load
-
10
30
μ
s
Inductive Use Test
T
C
= 150
o
C
T
C
= 25
o
C
11.5
-
-
A
15
-
-
A
Thermal Resistance
R
θ
JC
(Figure 18)
-
-
1.1
o
C/W
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs INDUCTANCE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERARURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
12
4
44
20
I
S
,
40
160
200
120
80
t
AV
, TIME IN AVALANCHE (ms)
28
36
52
60
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs at V
GE
= 5V
T
J
= 25
o
C
T
J
= 150
o
C
L, INDUCTANCE (mH)
24
0
I
S
,
8
6
8
4
2
10
0
32
40
16
48
56
T
J
= 25
o
C
T
J
= 150
o
C
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs at V
GE
= 5V
T
J
, JUNCTION TEMPERATURE (
o
C)
1.08
1.00
1.20
1.28
V
C
,
-50
25
100
175
1.04
1.12
1.16
1.24
I
CE
= 6A
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
T
J
, JUNCTION TEMPERATURE (
o
C)
-50
25
100
175
1.38
1.30
1.50
1.34
1.42
1.46
V
C
,
I
CE
= 10A
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
HGT1S14N37G3VLS, HGTP14N37G3VL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S14N37G3VLS9A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N40F3VLS | 功能描述:IGBT 晶体管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S14N40G3VLS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S14N41G3VLS | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S14N41G3VLS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB |
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