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参数资料
型号： HGT1S14N37G3VLS
厂商： INTERSIL CORP
元件分类： 功率晶体管
英文描述： 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs)
中文描述： 25 A, N-CHANNEL IGBT, TO-263AB
文件页数： 8/8页
文件大小： 128K
代理商： HGT1S14N37G3VLS
8
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil Ltd.
8F-2, 96, Sec. 1, Chien-kuo North,
Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
HGT1S14N37G3VLS, HGTP14N37G3VL
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
LEAD
Lead No. 1
Lead No. 2
Lead No. 3
Term. No. 4
Mounting Flange
TERMINAL
Gate
Collector
Emitter
Collector
E
P
Q
D
H
1
E
1
L
L
1
60
o
b
1
b
1
2
e
3
e
1
A
c
J
1
45
o
D
1
A
1
TERM. 4
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
A
1
b
0.048
0.052
1.22
1.32
-
0.030
0.034
0.77
0.86
3, 4
b
1
c
0.045
0.055
1.15
1.39
2, 3
0.014
0.019
0.36
0.48
2, 3, 4
D
0.590
0.610
14.99
15.49
-
D
1
E
-
0.160
-
4.06
-
0.395
0.410
10.04
10.41
-
E
1
e
-
0.030
-
0.76
-
0.100 TYP
2.54 TYP
5
e
1
H
1
J
1
L
0.200 BSC
5.08 BSC
5
0.235
0.255
5.97
6.47
-
0.100
0.110
2.54
2.79
6
0.530
0.550
13.47
13.97
-
L
1
P
0.130
0.150
3.31
3.81
2
0.149
0.153
3.79
3.88
-
Q
0.102
0.112
2.60
2.84
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L
1
.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 7-97.
相关PDF资料
PDF描述
HGTP14N37G3VL 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs)
HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S20N36G3VLS 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
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相关代理商/技术参数
参数描述
HGT1S14N37G3VLS9A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
HGT1S14N40F3VLS 功能描述:IGBT 晶体管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
HGT1S14N40G3VLS 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S14N41G3VLS9A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB
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