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参数资料
| 型号： | HGT1S20N36G3VL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 37.7 A, 355 V, N-CHANNEL IGBT, TO-262AA |
| 封装： | TO-262AA, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 256K |
| 代理商： | HGT1S20N36G3VL |
2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1
Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR to EMITTER CURRENT vs
SATURATION VOLTAGE
FIGURE 4. COLLECTOR to EMITTER CURRENT vs
SATURATION VOLTAGE
FIGURE 5. SATURATION VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 6. SATURATION VOLTAGE vs JUNCTION
TEMPERATURE
I
C
,
V
GE
, GATE to EMITTER VOLTAGE (V)
10
2
3
4
5
40
20
0
6
30
50
1
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 175
o
C
PULSE DURATION = 250
μ
s,
DUTY CYCLE <0.5%, V
CE
= 10V
I
C
,
100
80
60
40
20
0
V
CE
, COLLECTOR to EMITTER VOLTAGE (V)
0
2
4
6
8
10
7V
5.0V
4.5V
4.0V
3.5V
V
GE
= 10V
PULSE DURATION = 250
μ
s,
DUTY CYCLE <0.5%, T
C
= +25
o
C
I
C
,
V
CE(SAT)
, SATURATION VOLTAGE (V)
T
C
= 175
o
C
V
GE
= 5.0V
V
GE
= 4.5V
0
1
2
3
4
10
20
30
40
V
GE
= 4.0V
0
4
3
2
1
0
40
30
20
10
0
I
C
,
V
CE(SAT)
, SATURATION VOLTAGE (V)
5
V
GE
= 4.5V
-40
o
C
25
o
C
175
o
C
50
-25
25
75
125
175
1.1
1.2
1.3
1.4
V
C
,
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
= 10A
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
-25
25
75
125
175
T
J
, JUNCTION TEMPERATURE (
o
C)
V
C
,
1.5
1.7
1.9
2.1
V
GE
= 4.0V
= 4.5V
V
GE
= 5.0V
I
CE
= 20A
2.2
2.0
1.8
1.6
V
V
GE
= 4.5V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S20N36G3VLS | 功能描述:IGBT 晶体管 20A 360V Clamp RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S20N60A4S9A | 功能描述:IGBT 晶体管 600V SMPS SERIES NCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S20N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S20N60B3S9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-263AB |
| HGT1S20N60C3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-262AA |
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