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参数资料
| 型号： | HGT1S7N60C3DS9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
Typical Performance Curves
50
40
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
500
450
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
30
20
V GE = 10V
400
350
V GE = 10V or 15V
300
V GE = 15V
10
250
5
2
5
8
11
14
17
20
200
2
5
8 11 14 17
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. TURN-ON DELAY TIME vs COLLECTOR
TO EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 8. TURN-OFF DELAY TIME vs
COLLECTOR TO EMITTER CURRENT
200
100
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
V GE = 10V
300
250
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
200
V GE = 10V or 15V
10
V GE = 15V
150
5
2
5
8 11
14
17
20
100
2
5
8
11
14
17
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN-ON RISE TIME vs COLLECTOR
TO EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Single Pulse Maximum
Power Dissipation
2000
1000
500
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
V GE = 10V
3000
1000
T J = 150 o C, R G = 50 ? , L = 1mH, V CE(PK) = 480V
V GE = 15V
100
500
V GE = 10V OR 15V
40
2
5
8 11 14 17
20
100
2
5
8 11 14 17
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. TURN-ON ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
5
I CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
www.fairchildsemi.com
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