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参数资料
| 型号： | HGT1S7N60C3DS9A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 描述： | IGBT UFS N-CH 600V 14A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 800 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 14A |
| 功率 - 最大： | 60W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting springs
or by the insertion into conductive material such as
ECCOSORBD ? LD26 or equivalent.
When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable means
- for example, with a metallic wristband.
Tips of soldering irons should be grounded.
Devices should never be inserted into or removed from
circuits with power on.
Gate Voltage Rating - Never exceed the gate-voltage rating
of V GEM . Exceeding the rated V GE can result in permanent
damage to the oxide layer in the gate region.
Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions can
result in turn-on of the device due to voltage buildup on the
input capacitor due to leakage currents or pickup.
Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
8
Operating Frequency Information
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I CE ) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f MAX1 or f MAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f MAX1 is defined by f MAX1 = 0.05/(t d(OFF)I + t d(ON)I ). Deadtime
(the denominator) has been arbitrarily held to 10% of the
on-state time for a 50% duty factor. Other definitions are
possible. t d(OFF)I and t d(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM . t d(OFF)I is
important when controlling output ripple under a lightly
loaded condition.
f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON ). The
allowable dissipation (P D ) is defined by P D = (T JM - T C )/R θ JC .
The sum of device switching and conduction losses must
not exceed P D . A 50% duty factor was used (Figure 13)
and the conduction losses (P C ) are approximated by
P C = (V CE x I CE )/2.
E ON and E OFF are defined in the switching waveforms
shown in Figure 21. E ON is the integral of the instantaneous
power loss (I CE x V CE ) during turn-on and E OFF is the
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E OFF ; i.e. the
collector current equals zero (I CE = 0).
www.fairchildsemi.com
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