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参数资料
| 型号： | HGTG20N120CND |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 63 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 3/8页 |
| 文件大小： | 121K |
| 代理商： | HGTG20N120CND |
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
I
CE
= 20A
V
CE
= 960V
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 20)
J
= 150
o
C
-
21
26
ns
Current Rise Time
t
rI
-
17
22
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
225
270
ns
Current Fall Time
t
fI
-
340
400
ns
Turn-On Energy
E
ON
-
3.8
5.0
mJ
Turn-Off Energy (Note 3)
E
OFF
-
4.6
5.3
mJ
Diode Forward Voltage
V
EC
I
EC
= 20A
-
2.6
3.2
V
Diode Reverse Recovery Time
t
rr
I
EC
= 20A, dI
EC
/dt = 200A/
μ
s
-
62
75
ns
I
EC
= 2A, dI
EC
/dt = 200A/
μ
s
-
44
55
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
0.32
o
C/W
Diode
-
-
0.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
20
V
GE
= 15V
25
75
100
125
150
40
30
10
50
60
70
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
80
0
I
C
,
20
40
600
800
400
200
1000
1200
0
100
120
60
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 200
μ
H
HGTG20N120CND
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PDF描述 |
|---|---|
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| HGTG20N60B3D | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N沟道绝缘栅双极晶体管（带反并行超快速二极管)) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N120E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N50C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG20N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG20N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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