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参数资料
| 型号： | HGTG20N120CND |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 63 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 4/8页 |
| 文件大小： | 121K |
| 代理商： | HGTG20N120CND |
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
T
J
= 150
o
C, R
G
= 3
, L = 1mH, V
CE
= 960V
f
M
,
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
10
40
30
50
10
100
20
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
75
o
C
75
o
C
V
GE
15V
12V
110
o
C
12V
15V
110
o
C
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 0.32
C/W, SEE NOTES
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
12
13
14
15
16
5
10
15
20
100
150
200
300
t
SC
I
SC
25
250
V
CE
= 960V, R
G
= 3
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
20
40
6
8
10
80
100
60
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
40
60
80
0
2
4
6
8
20
100
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
10
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
8
4
2
15
10
5
12
25
30
0
35
40
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
20
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
15
10
5
1
4
2
5
7
8
25
30
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
35
40
3
20
HGTG20N120CND
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| HGTG20N120E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGTG20N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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