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参数资料
| 型号： | HGTG20N60B3D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N沟道绝缘栅双极晶体管（带反并行超快速二极管)) |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 2/6页 |
| 文件大小： | 135K |
| 代理商： | HGTG20N60B3D |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N60B3D
600
600
40
20
20
160
±
20
±
30
30A at 600V
165
1.32
-40 to 150
260
4
10
UNITS
V
V
A
A
A
A
V
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector to Gate Voltage, R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Average Diode Forward Current at 110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
C
= 150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
W
W/
o
C
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE
= 360V, T
C
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
PARAMETER
TEST CONDITIONS
I
C
= 250
μ
A, V
GE
= 0V
V
CE
= BV
CES
MIN
600
-
-
-
-
3.0
-
100
30
TYP
-
-
-
1.8
2.1
5.0
-
-
-
MAX
-
250
2.0
2.0
2.5
6.0
±
100
-
-
UNITS
V
μ
A
mA
V
V
V
nA
A
A
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
20V
T
C
= 150
o
C
V
GE
= 15V,
R
G
= 10
,
L = 45
μ
H
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
T
C
= 150
o
C,
I
CE
= I
C110
V
CE
= 0.8 BV
CES,
V
GE
= 15V
R
G
= 10
,
L = 100
μ
H
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
V
CE
= 480V
V
CE
= 600V
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
80
105
25
20
220
140
475
1050
1.5
-
-
-
-
-
V
nC
nC
ns
ns
ns
ns
μ
J
μ
J
V
ns
ns
o
C/W
o
C/W
V
GE
= 15V
V
GE
= 20V
105
135
-
-
275
175
-
-
1.9
55
45
0.76
1.2
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
I
EC
= 20A
I
EC
= 20A, dI
EC
/dt = 100A/
μ
s
I
EC
= 1A, dI
EC
/dt = 100A/
μ
s
IGBT
Diode
Thermal Resistance
R
θ
JC
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
HGTG20N60B3D
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| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体管) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60B3D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60B3D_Q | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60C3 | 制造商:Harris Corporation 功能描述: |
| HGTG20N60C3D | 功能描述:IGBT 晶体管 UFS 20A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
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