- 您现在的位置：买卖IC网 > PDF目录385377 > HGTG20N60B3D (INTERSIL CORP) 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N沟道绝缘栅双极晶体管（带反并行超快速二极管)) PDF资料下载
参数资料
| 型号： | HGTG20N60B3D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N沟道绝缘栅双极晶体管（带反并行超快速二极管)) |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 4/6页 |
| 文件大小： | 135K |
| 代理商： | HGTG20N60B3D |
4
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
10
20
50
30
40
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
= 480V, V
GE
= 15V
100
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
500
400
300
200
100
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
= 480V, V
GE
= 15V
t
r
,
1
10
100
0
10
20
30
40
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
1000
100
10
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
,
L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
40
E
O
,
μ
J
1400
1000
0
V
CE
= 480V, V
GE
= 15V
1200
800
600
400
200
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J2500
2000
1500
1000
500
0
0
10
20
30
40
V
CE
= 480V, V
GE
= 15V
T
J
= 150
o
C, R
G
= 10
, L = 100
μ
H
HGTG20N60B3D
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG24N60D1D | 3.3V 36-mc CPLD |
| HGTG24N60D1 | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG30N120D2 | 30A, 1200V N-Channel IGBT |
| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体管) |
| HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N沟道绝缘栅双极型晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60B3D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60B3D_Q | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60C3 | 制造商:Harris Corporation 功能描述: |
| HGTG20N60C3D | 功能描述:IGBT 晶体管 UFS 20A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
发布紧急采购，3分钟左右您将得到回复。