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参数资料
| 型号： | HGTG20N60B3D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(40A, 600V，N沟道绝缘栅双极晶体管（带反并行超快速二极管)) |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 5/6页 |
| 文件大小： | 135K |
| 代理商： | HGTG20N60B3D |
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
30
40
10
100
500
V
CE
= 480V
f
MAX2
= (P
D
- P
C
)/(E
ON
+E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 0.76
o
C/W
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C, V
GE
= 15V
R
G
= 10
, L = 100mH
100
200
300
400
500
600
700
0
20
0
40
80
100
120
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
T
C
= 150
o
C, V
GE
= 15V, R
G
= 10
60
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.01
0.1
0.2
0.05
0.02
SINGLE PULSE
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
R
0.5
25
o
C
150
o
C
100
o
C
0
0.5
1.0
1.5
2.0
2.5
20
40
60
80
100
0
I
E
,
V
EC
, FORWARD VOLTAGE (V)
1
10
20
5
50
40
30
20
10
0
t
b
t
r
,
I
EC
, FORWARD CURRENT (A)
t
rr
t
a
T
C
= 25
o
C, dI
EC
/dt = 100A/
μ
s
HGTG20N60B3D
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| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体管) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG20N60B3D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG20N60B3D_Q | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60C3 | 制造商:Harris Corporation 功能描述: |
| HGTG20N60C3D | 功能描述:IGBT 晶体管 UFS 20A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG20N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
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