- 您现在的位置：买卖IC网 > PDF目录385377 > HGTG24N60D1D (HARRIS SEMICONDUCTOR) 3.3V 36-mc CPLD PDF资料下载
参数资料
| 型号： | HGTG24N60D1D |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3.3V 36-mc CPLD |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 3/5页 |
| 文件大小： | 35K |
| 代理商： | HGTG24N60D1D |
3-109
HGTG24N60D1D
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
Typical Performance Curves
(Continued)
50
40
30
20
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
10
t
F
,
1
10
40
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
CE
= 480V, V
GE
= 10V AND 15V,
T
J
= +150
C, R
G
= 25
, L = 500
μ
H
1000
900
800
700
600
500
400
300
200
100
0
6000
5000
4000
3000
2000
1000
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
C
ISS
C
OSS
C
RSS
600
450
300
150
0
V
C
,
V
G
,
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
V
CC
= BV
CES
R
L
= 30
I
G(REF)
= 1.83mA
GE
= 10V
V
CC
= BV
CES
10.0
7.5
5.0
2.5
0
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
3
2
1
0
V
C
,
1
10
40
V
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 10V
T
J
= +150
o
C
V
GE
= 15V
7.00
1.00
0.10
0.05
W
O
,
1
10
40
I
CE
, COLLECTOR-EMITTER CURRENT (A)
T
J
= +150
o
C, R
G
= 25
,
L = 500
μ
H
V
CE
= 240V, V
GE
= 10V, 15V
V
CE
= 480V, V
GE
= 10V, 15V
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG24N60D1 | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG30N120D2 | 30A, 1200V N-Channel IGBT |
| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体管) |
| HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N沟道绝缘栅双极型晶体管) |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG24N60DID | 制造商:Harris Corporation 功能描述: |
| HGTG27N120BN | 功能描述:IGBT 晶体管 72A 1200V NPT Series N-Ch IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG27N120BN | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG27N120BN_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:72A, 1200V, NPT Series N-Channel IGBT |
| HGTG27N60C3DR | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。