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参数资料
| 型号： | HGTG24N60D1D |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3.3V 36-mc CPLD |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 5/5页 |
| 文件大小： | 35K |
| 代理商： | HGTG24N60D1D |
3-111
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HGTG24N60D1D
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG24N60D1 | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG30N120D2 | 30A, 1200V N-Channel IGBT |
| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体管) |
| HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N沟道绝缘栅双极型晶体管) |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG24N60DID | 制造商:Harris Corporation 功能描述: |
| HGTG27N120BN | 功能描述:IGBT 晶体管 72A 1200V NPT Series N-Ch IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG27N120BN | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG27N120BN_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:72A, 1200V, NPT Series N-Channel IGBT |
| HGTG27N60C3DR | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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