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参数资料
| 型号： | HGTG30N60B3D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体管) |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 3/8页 |
| 文件大小： | 118K |
| 代理商： | HGTG30N60B3D |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C,
I
CE
= I
C110
,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 3
,
L = 1mH,
Test Circuit (Figure 19)
-
32
-
ns
Current Rise Time
t
rI
-
24
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
275
320
ns
Current Fall Time
t
fI
-
90
150
ns
Turn-On Energy
E
ON
-
1300
1550
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
1600
1900
μ
J
Diode Forward Voltage
V
EC
I
EC
= 30A
-
1.95
2.5
V
Diode Reverse Recovery Time
t
rr
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
32
40
ns
I
EC
= 30A, dI
EC
/dt = 200A/
μ
s
-
45
55
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
0.6
o
C/W
Diode
-
-
1.3
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
40
20
30
50
60
V
GE
= 15V
25
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
125
700
75
0
I
C
,
25
50
300
400
200
100
500
600
100
0
150
175
200
225
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
HGTG30N60B3D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG30N60B3D_Q | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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