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参数资料
| 型号： | HGTG30N60B3D |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体管) |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 5/8页 |
| 文件大小： | 118K |
| 代理商： | HGTG30N60B3D |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
20
10
30
50
25
30
35
40
45
50
40
55
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
20
0
50
250
200
100
60
10
150
50
40
30
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
30
60
10
250
300
50
40
100
200
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 3
, L = 1mH,
V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
30
60
10
40
100
120
50
40
60
80
T
J
= 150
o
C, V
GE
= 10V AND 15V
T
J
= 25
o
C, V
GE
= 10V AND 15V
R
G
= 3
, L = 1mH, V
CE
= 480V
I
C
,
0
50
100
150
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
4
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= -55
o
C
Q
G
, GATE CHARGE (nC)
0
8
10
6
4
2
0
50
V
G
,
V
CE
= 400V
V
CE
= 600V
150
200
100
12
14
16
V
CE
= 200V
I
g (REF)
= 1mA, R
L
= 10
, T
C
= 25
o
C
HGTG30N60B3D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG30N60B3D_Q | 功能描述:IGBT 晶体管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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