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参数资料
| 型号： | HGTG32N60E2 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 2/4页 |
| 文件大小： | 33K |
| 代理商： | HGTG32N60E2 |
3-121
Specifications HGTG32N60E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector-Emitter Leakage Voltage
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
250
μ
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
4.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
2.4
2.9
V
T
C
= +125
o
C
-
2.4
3.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
6.5
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
200
260
nC
V
GE
= 20V
-
265
345
nC
Current Turn-On Delay Time
t
D(ON)I
L = 500
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
630
820
ns
Current Fall Time
t
FI
-
620
800
ns
Turn-Off Energy (Note 1)
W
OFF
-
3.5
-
mJ
Thermal Resistance
R
θ
JC
-
0.5
0.6
o
C/W
NOTE:
1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG32N60E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
100
80
60
40
20
0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 15V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
100
90
80
70
60
50
40
30
20
10
0
I
C
,
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 15V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 7.5V
V
GE
= 7.0V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 5.5V
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| HGTG40N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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