- 您现在的位置：买卖IC网 > PDF目录385378 > HGTG34N100E2 (HARRIS SEMICONDUCTOR) LED 5MM VERT SUP DIFF YEL PC MNT PDF资料下载
参数资料
| 型号： | HGTG34N100E2 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | LED 5MM VERT SUP DIFF YEL PC MNT |
| 中文描述： | 55 A, 1000 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 2/5页 |
| 文件大小： | 38K |
| 代理商： | HGTG34N100E2 |
3-125
Specifications HGTG34N100E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1000
-
-
V
Collector-Emitter Leakage Voltage
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
1.0
mA
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
4.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
T
C
= +25
o
C
-
2.8
3.2
V
T
C
= +125
o
C
-
2.8
3.1
V
I
C
= I
C90
,
V
GE
= 10V
T
C
= +25
o
C
-
2.9
3.3
V
T
C
= +125
o
C
-
3.0
3.4
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
500
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
7.3
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
185
240
nC
V
GE
= 20V
-
240
315
nC
Current Turn-On Delay Time
t
D(ON)I
L = 50
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 15V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
610
795
ns
Current Fall Time
t
FI
-
710
925
ns
Turn-Off Energy (Note 1)
W
OFF
-
7.1
-
mJ
Current Turn-On Delay Time
t
D(ON)I
L = 50
μ
H, I
C
= I
C90
, R
G
= 25
,
V
GE
= 10V, T
J
= +125
o
C,
V
CE
= 0.8 BV
CES
-
100
-
ns
Current Rise Time
t
RI
-
150
-
ns
Current Turn-Off
t
D(OFF)I
-
460
600
ns
Current Fall Time
t
FI
-
670
870
ns
Turn-Off Energy (Note 1)
W
OFF
-
6.5
-
mJ
Thermal Resistance
R
θ
JC
-
0.5
0.6
o
C/W
NOTE: 1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG34N100E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
相关PDF资料 |
PDF描述 |
|---|---|
| HGTG40N60A4 | 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N沟道绝缘栅双极型晶体管) |
| HGTG40N60B3 | 70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N沟道绝缘栅双极晶体管) |
| HI-1567CDI | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567CDIM | 5V MONOLITHIC DUAL TRANSCEIVERS |
| HI-1567CDIT | 5V MONOLITHIC DUAL TRANSCEIVERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG40N6 | 制造商:HARRIS 制造商全称:HARRIS 功能描述:70A, 600V, UFS Series N-Channel IGBT |
| HGTG40N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG40N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG40N60B3 | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
发布紧急采购，3分钟左右您将得到回复。