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参数资料
| 型号： | HGTG34N100E2 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | LED 5MM VERT SUP DIFF YEL PC MNT |
| 中文描述： | 55 A, 1000 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 3/5页 |
| 文件大小： | 38K |
| 代理商： | HGTG34N100E2 |
3-126
HGTG34N100E2
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
C
= +150
o
C
T
C
= +25
o
C
T
C
= -40
o
C
100
90
80
70
60
50
40
30
20
10
0
I
C
,
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%
T
C
= +25
C
V
GE
= 15V
V
GE
= 8.0V
V
GE
= 7.0V
V
GE
= 6.5V
V
GE
= 6.0V
V
GE
= 10V
60
50
40
30
20
0
I
C
,
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
10
V
GE
= 15V
V
GE
= 10V
2.0
1.5
1.0
0.5
0.0
t
F
,
μ
s
1
10
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 10V AND 15V, T
J
= +150
o
C,
R
G
= 25
, L = 50
μ
H
V
CE
= 800V
V
CE
= 400V
10000
8000
6000
4000
2000
0
C
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
C
RSS
C
OSS
C
ISS
1000
750
500
250
0
V
C
,
V
G
,
10
5.0
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
7.5
2.5
V
CC
=
BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
TIME (
μ
s)
V
CC
=
BV
CES
R
L
= 29.4
I
G(REF)
= 4.0mA
V
GE
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