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参数资料
| 型号： | HGTG40N60A4 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N沟道绝缘栅双极型晶体管) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 4/8页 |
| 文件大小： | 93K |
| 代理商： | HGTG40N60A4 |
4-4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
200
70
10
40
300
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
100
T
C
V
GE
15V
75
o
C
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
15
2
10
200
1200
t
SC
I
SC
12
1000
13
14
4
6
8
400
600
800
16
V
CE
= 390V, R
G
= 2.2
, T
J
= 125
o
C
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
0.2
0.6
0.8
40
50
30
60
70
80
1.0
1.4
1.2
2.0
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
1.8
1.6
0.4
I
C
,
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
1.6
1.8
2.0
10
20
40
50
30
60
70
80
0
2.2
T
J
= 125
o
C
E
O
,
μ
J
2500
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2000
1000
500
3000
0
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
4000
3500
4500
5000
10
0
30
40
50
60
20
70
80
5500
1200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
800
400
1000
1400
1600
600
10
0
30
40
50
60
20
70
80
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
1800
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
200
HGTG40N60A4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG40N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG40N60B3 | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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