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参数资料
| 型号： | HGTG40N60A4 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N沟道绝缘栅双极型晶体管) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 5/8页 |
| 文件大小： | 93K |
| 代理商： | HGTG40N60A4 |
4-5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
22
24
26
28
30
32
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
20
10
0
40
50
60
70
30
80
34
36
38
40
42
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
40
20
20
10
0
40
50
60
70
30
80
60
120
100
80
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 125
o
C, T
J
= 25
o
C, V
GE
= 12V
10
30
0
150
20
130
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
50
190
70
60
170
180
40
160
80
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V OR 15V, T
J
= 25
o
C
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
35
30
45
40
10
30
0
20
50
70
60
40
80
55
50
65
60
70
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 2.2
, L = 200
μ
H, V
CE
= 390V
I
C
,
0
50
100
7
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
10
11
150
200
250
6
300
350
400
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
0
100
50
150
4
10
200
250
300
350
400
6
8
12
16
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
I
G(REF)
= 1mA, R
L
= 7.5
, T
C
= 25
o
C
HGTG40N60A4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG40N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG40N60B3 | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶体管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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