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参数资料
| 型号： | HGTP14N37G3VL |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| 中文描述： | 25 A, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 3/8页 |
| 文件大小： | 128K |
| 代理商： | HGTP14N37G3VL |
3
Gate to Emitter Breakdown Voltage
BV
GES
t
d(ON)I
I
GES
=
±
2mA
I
C
= 6.5A, R
G
= 1k
, V
GE
= 5V,
R
L
= 2.1
, V
DD
= 14V, T
J
= 150
o
C
(Figure 14)
±
12
±
14
-
V
Current Turn-On Delay Time -
Resistive Load
-
1
4
μ
s
Current Turn-On Rise Time -
Resistive Load
t
rI
I
C
= 6.5A, R
G
= 1k
V
GE
= 5V, R
L
= 2.1
V
DD
= 14V, T
J
= 150
o
C (Figure 14)
t
d(OFF)I
+ t
fI
I
C
= 6.5A, R
G
= 1k
V
GE
= 5V, L = 300
μ
H
V
DD
= 300V, T
J
= 150
o
C (Figure 14)
I
SCIS
L = 3mH, V
G
= 5V,
R
G
= 1k
(Figures 1 and 2)
-
3
7
μ
s
Current Turn-Off Time -
Inductive Load
-
10
30
μ
s
Inductive Use Test
T
C
= 150
o
C
T
C
= 25
o
C
11.5
-
-
A
15
-
-
A
Thermal Resistance
R
θ
JC
(Figure 18)
-
-
1.1
o
C/W
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs INDUCTANCE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERARURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
12
4
44
20
I
S
,
40
160
200
120
80
t
AV
, TIME IN AVALANCHE (ms)
28
36
52
60
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs at V
GE
= 5V
T
J
= 25
o
C
T
J
= 150
o
C
L, INDUCTANCE (mH)
24
0
I
S
,
8
6
8
4
2
10
0
32
40
16
48
56
T
J
= 25
o
C
T
J
= 150
o
C
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs at V
GE
= 5V
T
J
, JUNCTION TEMPERATURE (
o
C)
1.08
1.00
1.20
1.28
V
C
,
-50
25
100
175
1.04
1.12
1.16
1.24
I
CE
= 6A
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
T
J
, JUNCTION TEMPERATURE (
o
C)
-50
25
100
175
1.38
1.30
1.50
1.34
1.42
1.46
V
C
,
I
CE
= 10A
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
HGT1S14N37G3VLS, HGTP14N37G3VL
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