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参数资料
| 型号： | HGTP14N37G3VL |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| 中文描述： | 25 A, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 5/8页 |
| 文件大小： | 128K |
| 代理商： | HGTP14N37G3VL |
5
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
8
4
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
16
24
12
50
25
75
100
125
150
20
28
0
175
V
GE
= 5V
V
G
,
0.8
1.2
1.6
1.0
1.4
1.8
2.0
-50
25
100
175
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
= 1mA
V
CE
= V
GE
L
μ
A
0.1
10
100
25
50
75
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
125
1000
10000
1
175
V
ECS
= 24V
V
CES
= 300V
V
CES
= 250V
μ
s
T
J
, JUNCTION TEMPERATURE (
o
C)
2
14
4
10
6
8
12
16
25
50
75
100
150
125
175
RESISTIVE t
OFF
INDUCTIVE t
OFF
RESISTIVE t
ON
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1k
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
5
10
15
20
25
0
800
1600
2000
1200
2400
400
FREQUENCY = 1MHz
C
RES
C
OES
C
IES
0
16
40
Q
G
, GATE CHARGE (nC)
4
0
56
V
G
,
8
8
24
32
48
2
6
I
G(REF)
= 1mA, R
L
= 1.865
, T
J
= 25
o
C
V
CE
= 12V
V
CE
= 6V
HGT1S14N37G3VLS, HGTP14N37G3VL
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| HGTP14N40F3VL | 功能描述:IGBT 晶体管 400V/14A/TF<1.2US RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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| HGTP14N41G3VLS | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs |
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