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参数资料
| 型号： | HGTP14N37G3VL |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| 中文描述： | 25 A, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 4/8页 |
| 文件大小： | 128K |
| 代理商： | HGTP14N37G3VL |
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 10. TRANSFER CHARACTERISTIC
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
15
0
2
3
30
5
4
45
I
C
,
0
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 175
o
C
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
1
2
5
0
30
3
4
15
45
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 150
o
C
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
4
5
50
30
60
1
40
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= 25
o
C
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
20
40
60
50
70
0
2
3
4
1
10
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
J
= -40
o
C
5
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
40
30
20
50
60
3
2
4
5
0
1
I
C
,
V
GE
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
T
J
= 25
o
C
0
32
40
2
1
3
4
5
16
8
24
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
C
,
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 150
o
C
T
J
= -40
o
C
T
J
= 25
o
C
HGT1S14N37G3VLS, HGTP14N37G3VL
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| HGTP14N40F3VL | 功能描述:IGBT 晶体管 400V/14A/TF<1.2US RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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