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参数资料
| 型号： | HGTP5N120BND_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 216K |
| 代理商： | HGTP5N120BND_NL |
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
0.5
CIES
COES
1.0
CRES
FREQUENCY = 1MHz
C,
CAP
A
C
IT
ANCE
(
n
F
) 1.5
2.0
I CE
,COL
L
E
CT
OR
T
O
EM
IT
T
E
R
CURRENT
(A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
00.5
1.0
DUTY CYCLE < 0.5%, TC = 110
oC
PULSE DURATION = 250
s
VGE = 15V
VGE = 10V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
2
4
6
8
10
t1, RECTANGULAR PULSE DURATION (s)
Z
θJC
,
N
O
R
M
A
LI
ZE
D
T
H
ERM
A
L
R
E
SPO
NSE
10-2
10-1
100
10-5
10-3
10-2
10-1
100
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZθJC x RθJC) + TC
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t1
t2
PD
1
10
100
0
1234
5
678
I F
,F
O
R
W
ARD
CU
RRE
N
T
(
A
)
VF, FORWARD VOLTAGE (V)
150oC
-55oC
25oC
60
50
40
30
20
10
0
1234
5
6
7
IF, FORWARD CURRENT (A)
t,
RECO
VE
R
Y
T
IM
E
(
n
s
)
TC = 25
oC, dl
EC / dt = 200A/s
trr
ta
tb
HGTG5N120BND, HGTP5N120BND
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相关代理商/技术参数 |
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| HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP5N120CND | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120CNS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
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