- 您现在的位置：买卖IC网 > PDF目录296101 > HGTP5N120BND_NL (FAIRCHILD SEMICONDUCTOR CORP) 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes PDF资料下载
参数资料
| 型号： | HGTP5N120BND_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 216K |
| 代理商： | HGTP5N120BND_NL |
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in the
handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such as
“ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup on
the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3)
is presented as a guide for estimating device performance for
a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows fMAX1 or
fMAX2; whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions are
possible. td(OFF)I and td(ON)I are defined in Figure 19. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJM. td(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD =(TJM -TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC =(VCE xICE)/2.
EON and EOFF are defined in the switching waveforms shown
in Figure 21. EON is the integral of the instantaneous power
loss (ICE x VCE) during turn-on and EOFF is the integral of the
instantaneous power loss (ICE xVCE) during turn-off. All tail
losses are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0).
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
RG = 25
L = 2mH
VDD = 960V
+
-
HGTG5N120BND
tfI
td(OFF)I
trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG5N120BND, HGTP5N120BND
相关PDF资料 |
PDF描述 |
|---|---|
| HGTP12N60A4D_NL | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP12N60C3_NL | 24A,600V, UFS Series N-Channel IGBTs |
| HGTP12N60C3D_NL | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGTP20N60A4_NL | 600V, SMPS Series N-Channel IGBTs |
| HGTP2N120CN_NL | 13A, 1200V, NPT Series N-Channel IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP5N120CND | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120CNS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP6N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。