参数资料
型号: HIP2100IR
厂商: Intersil
文件页数: 4/12页
文件大小: 0K
描述: IC DRIVER HALF-BRIDGE 16-QFN
标准包装: 60
配置: 半桥
输入类型: PWM
延迟时间: 20ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 114V
电源电压: 9 V ~ 14 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-VQFN 裸露焊盘
供应商设备封装: 16-QFN-EP(5x5)
包装: 管件
HIP2100
Absolute Maximum Ratings
Supply Voltage, V DD, V HB -V HS (Notes 3, 4) . . . . . . . . -0.3V to 18V
LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on HO (Note 4) . . . . . . . . . . . . . . . V HS -0.3V to V HB +0.3V
Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V DD to HB diode . . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
Maximum Recommended Operating Conditions
Supply Voltage, V DD . . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Thermal Information
Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W)
SOIC (Note 5) . . . . . . . . . . . . . . . . . . . 95 50
EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0
QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5
DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0
Max Power Dissipation at +25°C in Free Air (SOIC, Note 5) . . . . 1.3W
Max Power Dissipation at +25°C in Free Air (EPSOIC, Note 6) . . 3.1W
Max Power Dissipation at +25°C in Free Air (QFN, Note 6) . . . . . 3.3W
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
Voltage on HS. . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . . V HS +8V to V HS +14.0V and V DD -1V to V DD +100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
3. The HIP2100 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this
mode of operation.
4. All voltages referenced to V SS unless otherwise specified.
5. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ JC, the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified.
T J = +25°C
T J = -40°C TO +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX
(Note 7)
(Note 7)
UNITS
SUPPLY CURRENTS
V DD Quiescent Current
V DD Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V SS Current, Quiescent
HB to V SS Current, Operating
I DD
I DDO
I HB
I HBO
I HBS
I HBSO
LI = HI = 0V
f = 500kHz
LI = HI = 0V
f = 500kHz
V HS = V HB = 114V
f = 500kHz
-
-
-
-
-
-
0.1
1.5
0.1
1.5
0.05
0.7
0.15
2.5
0.15
2.5
1
-
-
-
-
-
-
-
0.2
3
0.2
3
10
-
mA
mA
mA
mA
μA
mA
INPUT PINS
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Voltage Hysteresis
Input Pulldown Resistance
V IL
V IH
V IHYS
R I
4
-
-
-
5.4
5.8
0.4
200
-
7
-
-
3
-
-
100
-
8
-
500
V
V
V
k Ω
UNDERVOLTAGE PROTECTION
V DD Rising Threshold
V DD Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
V DDR
V DDH
V HBR
V HBH
7
-
6.5
-
7.3
0.5
6.9
0.4
7.8
-
7.5
-
6.5
-
6
-
8
-
8
-
V
V
V
V
4
FN4022.14
相关PDF资料
PDF描述
78F1R0K-RC CHOKE CONFORMAL COATED 1.0UH
T95D336M025EZAL CAP TANT 33UF 25V 20% 2917
S1D-13 RECTIFIER GPP SMD 200V 1A SMA
396-080-540-804 CARD EDGE 80POS DL .125X.250 BLK
T95D157K010EZAL CAP TANT 150UF 10V 10% 2917
相关代理商/技术参数
参数描述
HIP2100IR4 功能描述:IC DRIVER HALF BRIDGE 100V 12DFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
HIP2100IR4T 功能描述:IC DRIVER HALF BRIDGE 100V 12DFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
HIP2100IR4Z 功能描述:功率驱动器IC 100V H-BRDG DRVR 12LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP2100IR4ZT 功能描述:功率驱动器IC 100V H-BRDG DRVR 12LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP2100IRT 功能描述:IC DRVR HALF BRDG 100V/2A 16-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件