参数资料
| 型号： | HIP6006CBZ |
| 厂商： | Intersil |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC PWM CTRLR/VOLT OUT MON 14SOIC |
| 标准包装： | 500 |
| 应用： | 控制器，Intel Pentium? Pro、PowerP、Alpha |
| 输入电压： | 5V，12V |
| 输出数： | 1 |
| 输出电压： | 1.3 V ~ 12 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | * |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | * |
| 包装： | 管件 |
HIP6006
conduction losses are the largest component of power
dissipation for both the upper and the lower MOSFETs.
+12V
D BOOT
These losses are distributed between the two MOSFETs
according to duty factor (see the equations below). Only the
VCC
+
V D
-
+5V OR +12V
upper MOSFET has switching losses, since the Schottky
rectifier clamps the switching node before the synchronous
rectifier turns on.
HIP6006
BOOT
UGATE
C BOOT
Q1
NOTE:
P UPPER = I O2 x r DS(ON) x D + 1 Io x V IN x t SW x Fs
P LOWER = I O 2 xr DS(ON) x (1 - D)
2
PHASE
+5V
PVCC OR +12V
V G-S ≈ V CC - V D
Where: D is the duty cycle = V O / V IN ,
t SW is the switching interval, and
Fs is the switching frequency.
-
+
LGATE
PGND
Q2
D2
NOTE:
V G-S ≈ PVCC
These equations assume linear voltage-current transitions
and do not adequately model power loss due the reverse-
recovery of the lower MOSFETs body diode. The
gate-charge losses are dissipated by the HIP6006 and don't
GND
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
heat the MOSFETs. However, large gate-charge increases
the switching interval, t SW which increases the upper
MOSFET switching losses. Ensure that both MOSFETs are
+12V
VCC
+5V OR LESS
within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate
heatsink may be necessary depending upon MOSFET
power, package type, ambient temperature and air flow.
Standard-gate MOSFETs are normally recommended for
use with the HIP6006. However, logic-level gate MOSFETs
HIP6006
BOOT
UGATE
PHASE
+5V
OR +12V
PVCC
Q1
NOTE:
V G-S ≈ V CC - 5V
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFETs absolute gate-to-
source voltage rating determine whether logic-level
-
+
LGATE
PGND
Q2
D2
NOTE:
V G-S ≈ PVCC
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from V CC . The boot capacitor, C BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V CC
less the boot diode drop (V D ) when the lower MOSFET, Q2
turns on. A logic-level MOSFET can only be used for Q1 if
the MOSFETs absolute gate-to-source voltage rating
exceeds the maximum voltage applied to V CC . For Q2, a
logic-level MOSFET can be used if its absolute gate-to-
source voltage rating exceeds the maximum voltage applied
to PVCC.
Figure 10 shows the upper gate drive supplied by a direct
connection to V CC . This option should only be used in
converter systems where the main input voltage is +5 VDC
or less. The peak upper gate-to-source voltage is
approximately VCC less the input supply. For +5V main
power and +12 VDC for the bias, the gate-to-source voltage
of Q1 is 7V. A logic-level MOSFET is a good choice for Q1
and a logic-level MOSFET can be used for Q2 if its absolute
gate-to-source voltage rating exceeds the maximum voltage
applied to PVCC.
9
GND
FIGURE 10. UPPER GATE DRIVE - DIRECT V CC DRIVE OPTION
Schottky Selection
Rectifier D2 is a clamp that catches the negative inductor
swing during the dead time between turning off the lower
MOSFET and turning on the upper MOSFET. The diode must
be a Schottky type to prevent the lossy parasitic MOSFET
body diode from conducting. It is acceptable to omit the diode
and let the body diode of the lower MOSFET clamp the
negative inductor swing, but efficiency will drop one or two
percent as a result. The diode's rated reverse breakdown
voltage must be greater than the maximum input voltage.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6006CBZ-T | 功能描述:电压模式 PWM 控制器 PWMCNTRLR SYNCBUCK-14 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6006CBZ-TS2462 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
| HIP6006CV | 功能描述:IC CTRLR PWM VOLT MODE 14-TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| HIP6006CV-T | 功能描述:IC CTRLR PWM VOLT MODE 14-TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| HIP6006CV-TS2462 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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