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| 型号： | HIP6302CBZA |
| 厂商： | Intersil |
| 文件页数： | 15/16页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 16-SOIC |
| 标准包装： | 480 |
| PWM 型： | 控制器 |
| 输出数： | 2 |
| 频率 - 最大： | 305kHz |
| 电源电压： | 4.75 V ~ 5.25 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 包装： | 管件 |
HIP6302
1.0
supply the RMS current. Small ceramic capacitors should
be placed very close to the drain of the upper MOSFET to
0.8
0.6
0.4
0.2
0
3 CHANNEL
4 CHANNEL
SINGLE
CHANNEL
2 CHANNEL
suppress the voltage induced in the parasitic circuit
impedances.
For bulk capacitance, several electrolytic capacitors (Panasonic
HFQ series or Nichicon PL series or Sanyo MV-GX or
equivalent) may be needed. For surface mount designs, solid
tantalum capacitors can be used, but caution must be exercised
with regard to the capacitor surge current rating. These
capacitors must be capable of handling the surge-current at
power-up. The TPS series available from AVX, and the 593D
series from Sprague are both surge current tested.
0
0.1
0.2 0.3
DUTY CYCLE (V O /V IN )
0.4
0.5
MOSFET Selection and Considerations
FIGURE 12. RIPPLE CURRENT vs DUTY CYCLE
Input Capacitor Selection
The important parameters for the bulk input capacitors are
the voltage rating and the RMS current rating. For reliable
operation, select bulk input capacitors with voltage and
current ratings above the maximum input voltage and
largest RMS current required by the circuit. The capacitor
voltage rating should be at least 1.25 times greater than the
maximum input voltage and a voltage rating of 1.5 times is
a conservative guideline. The RMS current required for a
multi-phase converter can be approximated with the aid of
Figure 13.
0.5
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes two
loss components; conduction loss and switching loss. These
losses are distributed between the upper and lower
MOSFETs according to duty factor (see the following
equations). The conduction losses are the main component
of power dissipation for the lower MOSFETs, Q2 and Q4 of
Figure 1. Only the upper MOSFETs, Q1 and Q3 have
significant switching losses, since the lower device turns on
and off into near zero voltage.
The equations assume linear voltage-current transitions and
do not model power loss due to the reverse-recovery of the
lower MOSFETs body diode. The gate-charge losses are
dissipated by the Driver IC and don't heat the MOSFETs.
However, large gate-charge increases the switching time,
I O × r DS ( ON ) × V OUT
I O × V IN × t SW × F SW
V IN
P UPPER = ------------------------------------------------------------ + ----------------------------------------------------------
0.4
0.3
0.2
0.1
4 CHANNEL
SINGLE
CHANNEL
2 CHANNEL
3 CHANNEL
t SW which increases the upper MOSFET switching losses.
Ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature by
calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
2
2
I O × r DS ( ON ) × ( V IN – V OUT )
P LOWER = ---------------------------------------------------------------------------------
0
0
0.1
0.2 0.3
DUTY CYCLE (V O /V IN )
0.4
0.5
2
V IN
FIGURE 13. CURRENT MULTIPLIER vs DUTY CYCLE
First determine the operating duty ratio as the ratio of the
output voltage divided by the input voltage. Find the Current
Multiplier from the curve with the appropriate power
channels. Multiply the current multiplier by the full load
output current. The resulting value is the RMS current rating
required by the input capacitor.
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use ceramic capacitance
for the high frequency decoupling and bulk capacitors to
15
A diode, anode to ground, may be placed across Q2 and Q4
of Figure 1. These diodes function as a clamp that catches
the negative inductor swing during the dead time between
the turn off of the lower MOSFETs and the turn on of the
upper MOSFETs. The diodes must be a Schottky type to
prevent the lossy parasitic MOSFET body diode from
conducting. It is usually acceptable to omit the diodes and let
the body diodes of the lower MOSFETs clamp the negative
inductor swing, but efficiency could drop one or two percent
as a result. The diode's rated reverse breakdown voltage
must be greater than the maximum input voltage.
FN4766.3
December 27, 2004
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| HIP6302CBZA-T | 功能描述:电流型 PWM 控制器 TWO PHS SYNCH BUCK CNTRLR VRM 9 X RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| HIP6302CBZ-T | 功能描述:电流型 PWM 控制器 VER OF HIP6302CB-T RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| HIP6302EVAL1 | 功能描述:电源管理IC开发工具 HIP6302 EVAL BRD FOR 45A ATHLON RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| HIP6302V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller |
| HIP6302VCB | 功能描述:IC REG CTRLR BUCK PWM 16-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
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