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| 型号： | HIP6311ACBZA-T |
| 厂商： | Intersil |
| 文件页数： | 13/16页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 20-SOIC |
| 标准包装： | 1,000 |
| PWM 型： | 控制器 |
| 输出数： | 4 |
| 频率 - 最大： | 1.5MHz |
| 电源电压： | 4.75 V ~ 5.25 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 包装： | 带卷 (TR) |
HIP6311A
As discussed previously, the voltage drop across each Q2
transistor at the point in time when current is sampled is
r DSON (Q2) x I SAMPLE . The voltage at Q2’s drain, the
PHASE node, is applied through the R ISEN resistor to the
HIP6311A ISEN pin. This pin is held at virtual ground, so the
current into ISEN is:
I SENSE = I SAMPLE x r DS(ON) (Q2) / R ISEN .
causes voltage spikes across the interconnecting
impedances and parasitic circuit elements. These voltage
spikes can degrade efficiency, radiate noise into the circuit
and lead to device over-voltage stress. Careful component
layout and printed circuit design minimizes the voltage
spikes in the converter. Consider, as an example, the turnoff
transition of the upper PWM MOSFET. Prior to turnoff, the
upper MOSFET was carrying channel current. During the
R Isen
= I SAMPLE x r DS(ON) (Q2) / 50 μ A
turnoff, current stops flowing in the upper MOSFET and is
Example: From the previous conditions,
picked up by the lower MOSFET. Any inductance in the
switched current path generates a large voltage spike during
where I LT
I SAMPLE
r DS(ON) (Q2)
Then: R ISEN
I CURRENT TRIP
Short circuit I LT
= 100A,
= 25.49A,
= 4m ?
= 2.04K and
= 165%
= 165A.
the switching interval. Careful component selection, tight
layout of the critical components, and short, wide circuit
traces minimize the magnitude of voltage spikes. Contact
Intersil for evaluation board drawings of the component
placement and printed circuit board.
There are two sets of critical components in a DC-DC
converter using a HIP6311A controller and a HIP6601 gate
driver. The power components are the most critical because
they switch large amounts of energy. Next are small signal
Channel Frequency Oscillator
The channel oscillator frequency is set by placing a resistor,
R T , to ground from the FS/DIS pin. Figure 10 is a curve
showing the relationship between frequency, F SW , and
resistor R T . To avoid pickup by the FS/DIS pin, it is important
to place this resistor next to the pin. If this pin is also used to
disable the converter, it is also important to locate the pull-
down device next to this pin.
1,000
500
200
100
50
20
10
5
2
1
components that connect to sensitive nodes or supply critical
bypassing current and signal coupling.
The power components should be placed first. Locate the
input capacitors close to the power switches. Minimize the
length of the connections between the input capacitors, C IN ,
and the power switches. Locate the output inductors and
output capacitors between the MOSFETs and the load.
Locate the gate driver close to the MOSFETs.
The critical small components include the bypass capacitors
for VCC and PVCC on the gate driver ICs. Locate the bypass
capacitor, C BP , for the HIP6311A controller close to the
device. It is especially important to locate the resistors
associated with the input to the amplifiers close to their
respective pins, since they represent the input to feedback
amplifiers. Resistor R T , that sets the oscillator frequency
should also be located next to the associated pin. It is
especially important to place the R SEN resistor(s) at the
respective terminals of the HIP6311A.
A multi-layer printed circuit board is recommended. Figure 11
shows the connections of the critical components for one
output channel of the converter. Note that capacitors C IN and
C OUT could each represent numerous physical capacitors.
Dedicate one solid layer, usually the middle layer of the PC
board, for a ground plane and make all critical component
ground connections with vias to this layer. Dedicate another
solid layer as a power plane and break this plane into smaller
10
20
50
100
200
500 1,000 2,000 5,000 10,000
islands of common voltage levels. Keep the metal runs from
CHANNEL OSCILLATOR FREQUENCY, F SW (kHz)
FIGURE 10. RESISTANCE R T vs FREQUENCY
Layout Considerations
MOSFETs switch very fast and efficiently. The speed with
which the current transitions from one device to another
13
the PHASE terminal to inductor L O1 short. The power plane
should support the input power and output power nodes. Use
copper filled polygons on the top and bottom circuit layers for
the phase nodes. Use the remaining printed circuit layers for
small signal wiring. The wiring traces from the driver IC to the
MOSFET gate and source should be sized to carry at least
one ampere of current.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6311ACBZ-T | 功能描述:电流型 PWM 控制器 C4AM MULTI-PHS CONTR VID LVLS 5% AC RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| HIP6311CB | 功能描述:IC REG CTRLR BUCK PWM 20-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| HIP6311CB-T | 功能描述:IC REG CTRLR BUCK PWM 20-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| HIP6311CBZ | 功能描述:电流型 PWM 控制器 2-4 PHS SYNCH BUCK CNTRLR 0 8%F RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| HIP6311CBZA | 功能描述:电流型 PWM 控制器 W/ANL 2-4 PHS SYNCH BUCK CNTRLR 0 8%F RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
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