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参数资料
| 型号： | HIP6601BCB-T |
| 厂商： | INTERSIL CORP |
| 元件分类： | MOSFETs |
| 英文描述： | Synchronous Rectified Buck MOSFET Drivers |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封装： | PLASTIC, MS-012AA, SOIC-8 |
| 文件页数： | 2/11页 |
| 文件大小： | 346K |
| 代理商： | HIP6601BCB-T |
2
FN9072.7
July 20, 2005
Pinouts
HIP6601BCB, HIP6603BCB (SOIC)
HIP6601ECB, HIP6603ECB (EPSOIC)
TOP VIEW
HIP6604B (QFN)
TOP VIEW
Ordering Information
PART NUMBER
TEMP. RANGE
(°C)
PACKAGE
PKG.
DWG. #
HIP6601BCB
0 to 85
8 Ld SOIC
M8.15
HIP6601BCB-T
8 Ld SOIC Tape and Reel
HIP6601BECB
0 to 85
8 Ld EPSOIC
M8.15B
HIP6601BECB-T
8 Ld EPSOIC Tape and Reel
HIP6603BCB
0 to 85
8 Ld SOIC
M8.15
HIP6603BCB-T
8 Ld SOIC Tape and Reel
HIP6603BECB
0 to 85
8 Ld EPSOIC
M8.15B
HIP6603BECB-T
8 Ld EPSOIC Tape and Reel
HIP6604BCR
0 to 85
16 Ld 4x4 QFN
L16.4x4
HIP6604BCR-T
16 Ld 4x4 QFN Tape and Reel
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
PVCC
VCC
LGATE
1
3
4
15
NC
BOOT
PWM
GND
U
N
P
N
16
14
13
2
12
10
9
11
6
5
7
8
NC
PVCC
LVCC
VCC
P
N
L
N
Block Diagrams
HIP6601B AND HIP6603B
HIP6604B QFN PACKAGE
PVCC
VCC
PWM
+5V
10K
10K
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
BOOT
UGATE
PHASE
LGATE
GND
VCC FOR HIP6601B
PVCC FOR HIP6603B
FOR HIP6601ECB AND HIP6603ECB DEVICES, THE PAD ON THE BOTTOM
SIDE OF THE PACKAGE MUST BE SOLDERED TO THE PC BOARD.
PAD
PVCC
VCC
PWM
+5V
10K
10K
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
BOOT
UGATE
PHASE
LGATE
PGND
LVCC
CONNECT LVCC TO VCC FOR HIP6601B CONFIGURATION
CONNECT LVCC TO PVCC FOR HIP6603B CONFIGURATION.
GND
PAD
PAD ON THE BOTTOM SIDE OF THE PACKAGE MUST BE SOLDERED TO THE PC BOARD
HIP6601B, HIP6603B, HIP6604B
相关PDF资料 |
PDF描述 |
|---|---|
| HIP6604B | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6604BCR | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603B | Synchronous Rectified Buck MOSFET Drivers |
| HIP6603BCB | FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603BCB-T | Synchronous Rectified Buck MOSFET Drivers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6601BCBZ | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ | 制造商:Intersil Corporation 功能描述:MOSFET Driver IC |
| HIP6601BCBZA | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZA-T | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ-T | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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