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参数资料
| 型号： | HIP6601BCB-T |
| 厂商： | INTERSIL CORP |
| 元件分类： | MOSFETs |
| 英文描述： | Synchronous Rectified Buck MOSFET Drivers |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封装： | PLASTIC, MS-012AA, SOIC-8 |
| 文件页数： | 8/11页 |
| 文件大小： | 346K |
| 代理商： | HIP6601BCB-T |
8
FN9072.7
July 20, 2005
Typical Performance Curves
FIGURE 3. POWER DISSIPATION vs LOADING
FIGURE 4. POWER DISSIPATION vs FREQUENCY (HIP6603B)
FIGURE 5. 3nF LOADING PROFILE (HIP6603B)
FIGURE 6. VARIABLE LOADING PROFILE (HIP6603B)
FIGURE 7. POWER DISSIPATION vs FREQUENCY (HIP6601B)
FIGURE 8. POWER DISSIPATION vs LOWER GATE
CAPACITANCE FOR FIXED VALUES OF UPPER
GATE CAPACITANCE
1000
800
600
400
200
1.0
2.0
3.0
4.0
5.0
GATE CAPACITANCE (C
U
= C
L
) (nF)
P
0
VCC = PVCC = 12V
FREQUENCY
= 1MHz
FREQUENCY = 500kHz
FREQUENCY = 200kHz
400
300
200
100
00
500
1000
1500
2000
FREQUENCY (kHz)
P
VCC = 12V, PVCC = 5V
C
U
= C
L
= 2nF
C
U
= C
L
= 1nF
C
U
= C
L
= 5nF
C
U
= C
L
= 4nF
C
U
= C
L
= 3nF
VCC = 12V, PVCC = 5V
C
U
= C
L
= 3nF
C
U
= 3nF
C
L
= 0nF
C
U
= 0nF
C
L
= 3nF
400
300
200
100
0
P
0
500
1000
1500
2000
FREQUENCY (kHz)
FREQUENCY = 500kHz
FREQUENCY = 1MHz
VCC = 12V,
FREQUENCY = 200kHz
PVCC = 5V
400
300
200
100
0
1.0
2.0
3.0
4.0
5.0
GATE CAPACITANCE = (C
U
= C
L
) (nF)
P
VCC = 12V, PVCC = 5V
FREQUENCY = 1MHz
FREQUENCY = 500kHz
FREQUENCY = 200kHz
1000
600
400
200
0
1.0
2.0
3.0
4.0
5.0
P
800
GATE CAPACITANCE (C
U
= C
L
) (nF)
500
400
300
200
1.0
2.0
3.0
4.0
5.0
P
LOWER GATE CAPACITANCE (C
L
) (nF)
100
VCC = 12V, PVCC = 5V
FREQUENCY = 500kHz
C
U
= 5nF
C
U
= 3nF
C
U
= 1nF
HIP6601B, HIP6603B, HIP6604B
相关PDF资料 |
PDF描述 |
|---|---|
| HIP6604B | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6604BCR | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603B | Synchronous Rectified Buck MOSFET Drivers |
| HIP6603BCB | FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603BCB-T | Synchronous Rectified Buck MOSFET Drivers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6601BCBZ | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ | 制造商:Intersil Corporation 功能描述:MOSFET Driver IC |
| HIP6601BCBZA | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZA-T | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ-T | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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