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参数资料
| 型号： | HJ882 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 2/4页 |
| 文件大小： | 39K |
| 代理商： | HJ882 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6014
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 2/4
HJ882
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
h
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=2V
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=40I
B
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=20I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
125
o
C
25
o
C
75
o
C
V
BE(sat)
@ I
C
=10I
B
Capacitance & Reverse-Biased Voltage
10
100
0.1
1
10
100
Reverse-Biased Voltage (V)
C
Cob
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