参数资料
型号: HMBT2369
厂商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶体管
文件页数: 2/3页
文件大小: 30K
代理商: HMBT2369
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6834
Issued Date : 1998.02.01
Revised Date : 2001.10.25
Page No. : 2/3
HMBT2369
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
h
V
CE
=2V
V
CE
=1V
Saturation Voltage & Collector Current
1
10
100
1000
10000
100000
1
10
100
1000
Collector Current-I
C
(mA)
S
V
CE(sat)
@ I
C
=33.3I
B
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
Collector Current-I
C
(mA)
S
V
BE(sat)
@ I
C
=10I
B
V
BE(sat)
@ I
C
=100I
B
Cutoff Frequency & Collector Current
100
1000
1
10
100
Collector Current-I
C
(mA)
C
FT @ VCE=10V
Capacitance & Reverse-Biased Voltage
1
10
0.1
1
10
100
Reverse Biased Voltage(V)
C
Cob
Safe Operating Area
0
0
1
10
1
10
100
Forward Voltage-V
CE
(V)
C
C
PT=1m
PT=100m
PT=1s
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