参数资料
型号: HMBT28S
厂商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶体管
文件页数: 2/4页
文件大小: 50K
代理商: HMBT28S
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200213
Issued Date : 2002.08.01
Revised Date : 2004.09.01
Page No. : 2/4
HM28S
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
100
1000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
h
hFE @ V
CE
=1V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
S
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=30I
B
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
1000
Reverse Biased Voltage (V)
C
Cob
Cutoff Frequency & Collector Current
1
10
100
1000
1
10
100
1000
Collector Current (mA) -V
CE
=10V
C
fT
PD-Ta
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature-Ta (
o
C)
P
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