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参数资料
| 型号： | HMC-ALH459 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 71000 MHz - 86000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3.10 X 1.60 MM, 0.10 MM HEIGHT, DIE-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 163K |
| 代理商： | HMC-ALH459 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
v01.1207
General Description
Features
Functional Diagram
Noise Figure: <5 dB
P1dB: +7 dBm
Gain: 14 dB
Supply Voltage: +2.4V
50 Ohm Matched Input/Output
Die Size: 3.10 x 1.60 x 0.1 mm
Electrical Specifications [1], T
A = +25° C
Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA [2]
Typical Applications
This HMC-ALH459 is ideal for:
Short Haul / High Capacity Links
Wireless LANs
Automotive Radar
Military & Space
E-Band Communication Systems
The HMC-ALH459 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
71 and 86 GHz. The HMC-ALH459 features 14 dB
of small signal gain, 4.5 dB of noise figure and an
output power of +7 dBm at 1dB compression from
two supply voltages at 2.1V and 2.4V respectively.
All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully pass-
ivated for reliable operation. This versatile LNA is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment
and contacted with RF probes.
HMC-ALH459
Parameter
Min.
Typ.
Max.
Units
Frequency Range
71 - 86
GHz
Gain
13
14
dB
Noise Figure
4.5
dB
Input Return Loss
8dB
Output Return Loss
10
dB
Output Power for 1 dB Compression (P1dB)
7
dBm
Supply Current (Idd1+Idd2+Idd3)
30
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Idd
total = 30 mA
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