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| 型号： | HMC-APH196 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 17000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 3.30 X 1.95 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 1/6页 |
| 文件大小： | 198K |
| 代理商： | HMC-APH196 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
v02.0209
General Description
Features
Functional Diagram
Output IP3: +31 dBm
P1dB: +22 dBm
Gain: 20 dB @ 20 GHz
Supply Voltage: +4.5V
50 Ohm Matched Input/Output
Die Size: 3.3 x 1.95 x 0.1 mm
Typical Applications
This HMC-APH196 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
The HMC-APH196 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between
17
and
30
GHz.
The
HMC-APH196
provides 20 dB of gain at 20 GHz, and an output
power of +22 dBm at 1 dB compression from a +4.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-APH196
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications.
All data Shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
HMC-APH196
Electrical Specifications
, T
A = +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 mA
[2]
Parameter
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Units
Frequency Range
17 - 24
24 - 27
27 - 30
GHz
Gain
15
20
14
17
11
16
dB
Input Return Loss
17
dB
Output Return Loss
25
23
dB
Output Power for 1 dB Compression (P1dB)
20
22
20
22
20
22
dBm
Output Third Order Intercept (IP3)
31
dBm
Supply Current (Idd1 + Idd2)
400
dBm
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd
total = 400 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-APH196-SX | 功能描述:IC RF AMP DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:17GHz ~ 30GHz P1dB:22dBm 增益:17dB 噪声系数:- RF 类型:VSAT，DBS 电压 - 电源:4.5V 电流 - 电源:400mA 测试频率:24GHz ~ 27GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-APH403 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 45 GHz |
| HMC-APH460 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz |
| HMC-APH460-SX | 功能描述:IC MMIC POWER AMP DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:27GHz ~ 31.5GHz P1dB:28dBm 增益:14dB 噪声系数:- RF 类型:VSAT，DBS 电压 - 电源:5V 电流 - 电源:900mA 测试频率:27GHz ~ 31.5GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-APH462 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz |
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