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参数资料
| 型号： | HMC-AUH232 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.10 X 1.70 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 1/10页 |
| 文件大小： | 394K |
| 代理商： | HMC-AUH232 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
v02.0209
General Description
Features
Functional Diagram
Small Signal Gain: 12 dB
Output Voltage: up to 8V pk-pk
Single-Ended I/Os
High Speed Performance: 46 GHz 3 dB Bandwidth
Low Power Dissipation: 0.9 W
Small Die Size: 2.1 x 1.70 x 0.1 mm
Electrical Specifications*, T
A = +25 °C
Typical Applications
This HMC-AUH232 is ideal for:
40 Gb/s Lithium Niobate/ Mach Zender
Fiber Optic Modulators
Broadband Gain Block for Test & Measurement
Equipment
Broadband Gain Block for RF Applications
Military & Space
The HMC-AUH232 is a GaAs MMIC HEMT Distributed
Driver Amplifier die which operates between DC and
43 GHz and provides a typical 3 dB bandwidth of
46 GHz. The amplifier provides 12 dB of small
signal gain while requiring only 180 mA from a +5V
supply. The HMC-AUH232 exhibits very good gain
and phase ripple to 40 GHz, and can output up to
8V peak-to-peak with low jitter, making it ideal for use
in broadband wireless, fiber optic communication and
test equipment applications. The amplifier die occupies
less than 3.6 mm2 which facilitates easy integration
into Multi-Chip-Modules (MCMs). The HMC-AUH232
requires external bias-tee as well as off-chip blocking
components and bypass capacitors for the DC supply
lines. A gate voltage adjust, Vgg2 is provided for
limited gain adjustment, while Vgg1 adjusts the bias
current for the device.
HMC-AUH232
Parameter
Min.
Typ.
Max.
Units
Frequency Range
DC - 43
GHz
Small Signal Gain
0.5 - 5.0 GHz
12
14
dB
35 - 45 GHz
10
12.5
dB
Input Return Loss
10
dB
Output Return Loss
8.5
dB
Supply Current
180
225
mA
3 dB Bandwidth
43
46
GHz
Gain Ripple (5 to 35 GHz)
±0.6
±1
dB
Group Delay Variation[1]
0.5 - 5.0 GHz
±14
±20
ps
5 - 30 GHz
±10
±11
ps
30 - 45 GHz
±22
±25
ps
相关PDF资料 |
PDF描述 |
|---|---|
| HMC-AUH249 | 0 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-AUH312 | 500 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-C001 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-AUH232_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz |
| HMC-AUH249 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz |
| HMC-AUH249_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz |
| HMC-AUH256 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
| HMC-AUH256_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
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