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参数资料
| 型号： | HMC-AUH232 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.10 X 1.70 MM, 0.10 MM HEIGHT, DIE-6 |
| 文件页数： | 3/10页 |
| 文件大小： | 394K |
| 代理商： | HMC-AUH232 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Parameter
Min.
Typ.
Max.
Units
10% to 90% Rise / Fall Time[2]
6 - 12
ps
Output Voltage Level[3]
8V
p-p
Additive jitter (RMS)
0.4
ps
1 dB Output Gain Compression Point at 20 GHz
16.5
dBm
Output Power
20 GHz @ Pin= 15 dBm[4]
22
dBm
40 GHz @ Pin= 15 dBm[4]
17
19.5
dBm
Power Dissipation
0.9
1.25
W
Noise Figure
5 GHz
5.4
dB
10 & 15 GHz
4.2
dB
20 GHz
4.6
dB
25 GHz
5.4
dB
30 GHz
8.3
dB
35 GHz
7.4
dB
40 GHz
9.1
dB
[1] Measured with a 1 GHz aperture
[4] Verified at RF on-wafer probe. Vgg1 is adjusted until the drain cur-
rent is 200 mA and Vgg2= 1.5 V.The drain voltage is applied through
the RF output port using a bias tee with 5 volts on the bias Tee.
[2] Measurement limited by rise/fall time of input reference signal
[3] With a 2.7 V
P-P
input signal
*Unless otherwise indicated, all measurements are from probed die
Electrical Specifications (Continued)*
Parameter
Symbol
Min.
Typ.
Max.
Units
Positive Supply Voltage
V
D
56
V
Positive Supply Current
I
D
150
180
225
mA
RF Input Power
12
16
dBm
Bias Current Adjust
Vgg1
-1.5
-0.2
V
Output Voltage Adjust
Vgg2
0
1.5
2
V
Operating Temperature
T
OP
025
85
°C
Power Dissipation
P
D
0.9
1.25
W
Recommended Operating Conditions
Parameter
P
DISS
T
BASE
T
CH
RMTF
(W)
(°C)
(°C/W)
(Hrs)
Thermal Resistance to back side of chip
1.25
85
145
48
5.8 x 108
Thermal resistance to backside of carrier using 25.4
um of 84-1LMIT epoxy
1.25
85
155
56
1.8 x 108
Thermal Resistance to back side of chip
1.25
110
170
48
3.9 x 107
Thermal resistance to backside of carrier using 25.4
um of 84-1LMIT epoxy
1.25
110
180
56
1.4 x 107
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Activation Energy
E
A
1.7
eV
Median time to Failure (MTF)
@125 °C Channel Temperature
MTF
6 x 109
Hours
Reliability Characteristics
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-AUH232_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz |
| HMC-AUH249 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz |
| HMC-AUH249_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz |
| HMC-AUH256 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
| HMC-AUH256_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC DRIVER AMPLIFIER, 17.5 - 41.0 GHz |
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