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| 型号： | HMC1002-TR |
| 厂商： | Honeywell Microelectronics & Precision Sensors |
| 文件页数： | 11/15页 |
| 文件大小： | 1409K |
| 描述： | SENSOR LINEAR MAGN 2AXIS 20-SOIC |
| 产品培训模块： | Magnetic Sensors |
| 标准包装： | 1 |
| 传感范围： | ±2g |
| 类型： | 线性 |
| 电源电压： | 5 V ~ 12 V |
| 输出类型： | 差分电压 |
| 特点： | 罗盘 - 双轴 |
| 工作温度： | -55°C ~ 150°C |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 20-SOIC |
| 包装： | 散装 |
| 产品目录页面： | 2814 (CN2011-ZH PDF) |
| 其它名称： | 342-1070 342-1070-1 342-1070-ND |
HMC1001/1002/1021/1022
www.honeywell.com
11
APPLICATION CIRCUITS
The following are typical application circuits using the HMC100x and HMC102x sensors.
TWO AXIS COMPASS OR MAGNETOMETER
Figure 5 shows the typical schematic diagram.
Figure 5 2-Axis Compass or Magnetometer
From Figure 5, the typical power supplied for VDD is nominally 5 volts, with about 8 volts for the set/reset strap supply
(VSR). A pair of complementary power MOSFETs provides the electronic switch functions, driving the set/reset minus
pins with the set/reset plus pins returned to the MOSFET ground. The MOSFETs are driven by typical 5 volt logic with
normally high levels expected when not pulsing. Each logic transition creates a very high current pulse, as high-to-low
transitions turn-on the P-channel FET while turning-off the N-channel FET. This transfers some of the energy from the
10uf reservoir capacitor to the pair of 0.47uf capacitors while providing a positive pulse. A negative pulse is performed on
the low-to-high logic transition as the P-channel FET is turned off and the N-channel FET is turned on. Then the energy
from the pair of 0.47uf capacitors is discharged through the set/reset straps and the N -channel MOSFET. Ceramic
capacitors with a low-ESR characteristic are required for best pulse performance.
Since the sensor output difference voltage is amplified by low cost operational amplifiers with a low supply voltage feature
(LMV324N), the amplifier requires a half supply voltage reference (VREF). This reference voltage is formed via a buffered
rail-splitter circuit, using a spare op-amp and resistors. The 1 nano-farad capacitors are used to bandwidth limit the
sensor, and to suppress interference. The resistors around the op-amp are chosen for earths magnetic field strength
(about 0.6 gauss) levels and to match with the sensor impedance. The 4.99k-ohm resistors are a bridging impedance that
is normally chosen to be 4 to 10 times larger than the sensor bridge resistance elements (HMC1002) at 850 ohms. The
1
R1
850
2
R2
850
R3
850
R4
850
VCC
VEE
4
3
6
X1A
LMV324N
R5
4.99K
R6
4.99K
R7
360K
C1
1N
VDD
VDD
R8
360K
VREF
8
R9
850
9
R10
850
R11
850
R12
850
VCC
VEE
10
11
12
X1B
LMV324N
R13
4.99K
R14
4.99K
R15
360K
C2
1N
VDD
VDD
R16
360K
VREF
16
R17
1.5
R18
1.5
XOUT
YOUT
VCC
VEE
15
X1C
LMV324N
VDD
R19
1K
R20
1K
VDD
VREF
C3
0.1U
17
18
14
X2
IRF7105P
C4
10U
X3
IRF7105N
C5
0.47U
C6
0.47U
13
R21
100
SR_IN
VSR
HMC1002
1
R1
850
2
R2
850
R3
850
R4
850
VCC
VEE
4
3
6
X1A
LMV324N
R5
4.99K
R6
4.99K
R7
360K
C1
1N
VDD
VDD
R8
360K
VREF
8
R9
850
9
R10
850
R11
850
R12
850
VCC
VEE
10
11
12
X1B
LMV324N
R13
4.99K
R14
4.99K
R15
360K
C2
1N
VDD
VDD
R16
360K
VREF
16
R17
1.5
R18
1.5
XOUT
YOUT
VCC
VEE
15
X1C
LMV324N
VDD
R19
1K
R20
1K
VDD
VREF
C3
0.1U
17
18
14
X2
IRF7105P
C4
10U
X3
IRF7105N
C5
0.47U
C6
0.47U
13
R21
100
SR_IN
VSR
HMC1002
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